參數(shù)資料
型號: GS816136
廠商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線和流量,通過同步唑的SRAM(1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存)
文件頁數(shù): 15/32頁
文件大?。?/td> 584K
代理商: GS816136
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/32
1999, Giga Semiconductor, Inc.
Preliminary
GS816118/36T-225/200/180/166/150/133
O
P
T
M
S
-
-
-
-
-
-
U
0
t
7
4
8
0
t
7
4
t
8
0
t
7
4
t
8
0
t
7
4
t
8
0
t
7
4
t
8
0
t
7
4
t
8
O
C
D
A
V
I
o
r
V
I
O
o
(
P
I
D
I
D
3
7
3
8
3
6
3
7
2
5
2
6
2
5
2
6
2
5
2
6
2
4
2
5
m
F
T
I
D
I
D
1
3
2
4
1
3
1
4
1
3
1
4
1
3
1
4
1
3
1
4
1
2
1
3
m
(
P
I
D
I
D
3
3
3
4
2
3
2
4
2
3
2
4
2
2
2
3
2
2
2
3
2
2
2
3
m
F
T
I
D
I
D
1
1
1
2
1
1
1
2
1
1
1
2
1
1
1
2
1
1
1
2
1
1
1
2
m
S
C
Z
V
D
P
I
S
1
2
1
2
1
2
1
2
1
2
1
2
m
F
T
I
S
1
2
1
2
1
2
1
2
1
2
1
2
m
D
C
D
A
V
I
o
I
P
I
D
8
8
7
8
7
7
6
7
6
6
5
5
m
F
T
I
D
6
6
5
5
5
5
5
5
5
5
4
5
m
相關(guān)PDF資料
PDF描述
GS816118 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8161E18BD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816136BD-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FBGA - Trays
GS816136BD-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FBGA - Trays
GS816136BD-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays
GS816136BD-150V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays
GS816136BD-200 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 165FBGA - Trays