參數(shù)資料
型號(hào)： EDX5116ABSE-2A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 512M bits XDR DRAM (32M words ?16 bits)
中文描述： 32M X 16 RAMBUS, PBGA104
封裝： LEAD FREE, FBGA-104
文件頁數(shù)： 27/78頁
文件大?。?/td> 3611K
代理商： EDX5116ABSE-2A-E
Preliminary Data Sheet E0643E30 (Ver. 3.0)
27
EDX5116ABSE
Figure 11
Interleaved Transac tions
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
9
T
10
T
11
T
12
T
13
T
14
T
15
T
16
T
17
T
18
T
19
T
20
T
21
T
22
T
23
T
8
Transaction a: WR
Transaction b: WR
Transaction c: WR
Transaction d: WR
Transaction e: WR
Transaction f: WR
a0 = {Ba,Ra}
b0 = {Bb,Rb}
c0 = {Bc,Rc}
d0 = {Bd,Rd}
e0 = {Be,Re}
f0 = {Bf,Rf}
a1 = {Ba,Ca1}
b1 = {Bb,Cb1}
c1 = {Bc,Cc1}
d1 = {Bd,Cd1}
e1 = {Be,Ce1}
f1 = {Bf,Cf1}
a2 = {Ba,Ca2}
b2 = {Bb,Cb2}
c2 = {Bc,Cc2}
d2 = {Bd,Cd2}
e2 = {Be,Ce2}
f2 = {Bf,Cf2}
a3 = {Ba}
b3 = {Bb}
c3 = {Bc}
d3 = {Bd}
e3 = {Be}
f3 = {Bf}
Bf = Ba
are different
banks.
Ba,Bb,Bc,Bd,Be
D(a2)
D(a1)
D(b2)
D(b1)
D(c2)
Transaction a: RD
Transaction b: RD
Transaction c: RD
Transaction d: RD
Transaction e: RD
a0 = {Ba,Ra}
b0 = {Bb,Rb}
c0 = {Bc,Rc}
d0 = {Bd,Rd}
e0 = {Be,Re}
a1 = {Ba,Ca1}
b1 = {Bb,Cb1}
c1 = {Bc,Cc1}
d1 = {Bd,Cd1}
e1 = {Be,Ce1}
a2 = {Ba,Ca2}
b2 = {Bb,Cb2}
c2 = {Bc,Cc2}
d2 = {Bd,Cd2}
e2 = {Be,Ce2}
a3 = {Ba}
b3 = {Bb}
c3 = {Bc}
d3 = {Bd}
e3 = {Be}
Be = Ba
different banks.
Ba,Bb,Bc,Bd are
Interleaved Page-empty Write Example
Interleaved Page-empty Read Example
c0
ACT
d0
ACT
a0
ACT
b0
ACT
e0
ACT
b1
WR
b2
WR
c1
WR
c2
WR
d1
WR
d2
WR
e1
WR
e2
WR
t
RC
t
RCD-W
a1
WR
b1
WR
b2
WR
c1
WR
c2
WR
c0
ACT
d1
WR
d2
WR
d0
ACT
e1
WR
e2
WR
a2
WR
a3
PRE
a0
ACT
b3
PRE
b0
ACT
c3
PRE
e0
ACT
f0
ACT
b3
PRE
c3
PRE
t
CC
t
WRP
t
CWD
a1
WR
a2
WR
a3
PRE
t
RP
t
RR
D(c1)
t
RC
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
9
T
10
T
11
T
12
T
13
T
14
T
15
T
16
T
17
T
18
T
19
T
20
T
21
T
22
T
23
T
8
c0
ACT
d0
ACT
a0
ACT
b0
ACT
e0
ACT
f0
ACT
b1
RD
b2
RD
c1
RD
c2
RD
d1
RD
d2
RD
e1
RD
e2
RD
t
RC
t
RCD-R
a1
RD
b1
RD
b2
RD
c1
RD
c2
RD
c0
ACT
d1
RD
d2
RD
d0
ACT
e1
RD
e2
RD
a2
RD
a3
PRE
a0
ACT
b3
PRE
b0
ACT
d3
PRE
e0
ACT
f0
ACT
t
CC
t
RDP
t
CAC
a1
RD
a2
RD
t
RP
t
RR
c3
PRE
t
CYCLE
t
CYCLE
The effective t
RC
time is increased by 4 t
CYCLE
DQ15..0
DQN15..0
CFM
CFMN
RQ11..0
(ACT)
RQ11..0
(COL)
RQ11..0
(PRE)
RQ11..0
(ALL)
DQ15..0
DQN15..0
CFM
CFMN
RQ11..0
(ACT)
RQ11..0
(COL)
RQ11..0
(PRE)
RQ11..0
(ALL)
Q(a2)
Q(a1)
Q(b2)
Q(b1)
Q(c2)
Q(c1)
D(d2)
D(e1)
f1
WR
f2
WR
D(d1)
f0
ACT
f1
WR
f2
WR
a3
PRE
b3
PRE
d3
PRE
c3
PRE
D(e1)
t
WRP
相關(guān)PDF資料
PDF描述
EDX5116ABSE-3A-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3C-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-4C-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ADSE 512M bits XDR⑩ DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDX5116ABSE-3A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-4C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*