參數(shù)資料
型號(hào)： EDX5116ABSE-2A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 512M bits XDR DRAM (32M words ?16 bits)
中文描述： 32M X 16 RAMBUS, PBGA104
封裝： LEAD FREE, FBGA-104
文件頁(yè)數(shù)： 13/78頁(yè)
文件大小： 3611K
代理商： EDX5116ABSE-2A-E
Preliminary Data Sheet E0643E30 (Ver. 3.0)
13
EDX5116ABSE
specifies the refresh bank address is also referred to as BR2..0.
See “Refresh Transactions” on page 40.
Table 5 shows the POP field encoding in the ROWP packet.
The first encoding specifies a NOPP (no operation) command.
There are four variations of PRE (precharge) command. Each
uses the BP field to specify the bank to be precharged. Each
also specifies a different delay of up to 3*t
CYCLE
using the
POP[1:0] field. A precharge command may be specified in
addition to a refresh command using the ROP field.
Table 6 shows the XOP field encoding in the COLX packet.
This field encodes the remaining commands.
The CALC and CALE commands perform calibration opera-
tions to ensure signal integrity on the Channel. See “Calibra-
tion Transactions” on page 42.
The PDN command causes the device to enter a power-down
state. See “Power State Management” on page 44.
Table 5
POP Field Encoding Summary
POP
[2:0]
Command
Description
000
NOPP
No operation.
001
-
Reserved.
010
-
Reserved.
011
-
Reserved.
100
PRE0
Row precharge command — Bank BP2..0 is precharged. This command is delayed by 0*t
CYCLE
.
101
PRE1
Row precharge command — Bank BP2..0 is precharged. This command is delayed by 1*t
CYCLE
.
110
PRE2
Row precharge command — Bank BP2..0 is precharged. This command is delayed by 2*t
CYCLE
.
111
PRE3
Row precharge command — Bank BP2..0 is precharged. This command is delayed by 3*t
CYCLE
.
Table 6
XOP Field Encoding Summary
XOP
[3:0]
Command
Command and Description
XOP
[3:0]
Command
Command and Description
0000
-
Reserved.
1000
CALC
Current calibration command.
0001
-
Reserved.
1001
CALZ
Impedance calibration command.
0010
-
Reserved.
1010
CALE
End calibration command (CALC).
0011
-
Reserved.
1011
-
Reserved.
0100
-
Reserved.
1100
PDN
Enter powerdown power state.
0101
-
Reserved.
1101
-
Reserved.
0110
-
Reserved.
1110
-
Reserved.
0111
-
Reserved.
1111
-
Reserved.
相關(guān)PDF資料
PDF描述
EDX5116ABSE-3A-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3C-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-4C-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ADSE 512M bits XDR⑩ DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDX5116ABSE-3A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-4C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*