參數(shù)資料
型號: EDX5116ABSE-2A-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits XDR DRAM (32M words ?16 bits)
中文描述: 32M X 16 RAMBUS, PBGA104
封裝: LEAD FREE, FBGA-104
文件頁數(shù): 16/78頁
文件大?。?/td> 3611K
代理商: EDX5116ABSE-2A-E
Preliminary Data Sheet E0643E30 (Ver. 3.0)
16
EDX5116ABSE
Figure 4
ACT-, RD-, WR-, PRE-to-ACT Packet Interac tions
T
0
T
1
T
2
T
3
CFMN
T
4
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5
T
6
T
7
T
9
T
10
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T
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T
20
T
21
T
22
T
23
T
8
T
0
T
1
T
2
T
3
CFMN
DQN15..0
T
4
T
5
T
6
T
7
T
9
T
10
T
11
T
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T
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15
T
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17
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23
T
8
a: ROWA Packet with ACT,Ba,Ra
b: ROWA Packet with ACT,Bb,Rb
T
0
T
1
T
2
T
3
CFMN
RQ11..0
DQN15..0
T
4
T
5
T
6
T
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T
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T
10
T
11
T
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T
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23
T
8
T
0
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1
T
2
T
3
CFMN
RQ11..0
DQN15..0
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4
T
5
T
6
T
7
T
9
T
10
T
11
T
12
T
13
T
14
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T
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18
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20
T
21
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23
T
8
AAd Case (activate-activate-different bank)
AAs Case (activate-activate-same bank)
a: ROWA Packet with ACT,Ba,Ra
b: ROWA Packet with ACT,Bb,Rb
RAd Case (read-activate-different bank)
a: COL Packet with RD,Ba,Ca
b: ROWA Packet with ACT,Bb,Rb
RAs Case (read-activate-same bank)
a: COL Packet with RD,Ba,Ca
b: ROWA Packet with ACT,Bb,Rb
WAd Case (write-activate-different bank)
a: COL Packet with WR,Ba,Ca
b: ROWA Packet with ACT,Bb,Rb
WAs Case (write-activate-same bank)
a: COL Packet with WR,Ba,Ca
b: ROWA Packet with ACT,Bb,Rb
PAd Case (precharge-activate-different bank)
a: ROWP Packet with PRE,Ba
b: ROWA Packet with ACT,Bb,Rb
PAs Case (precharge-activate-same bank)
a: ROWP Packet with PRE,Ba
b: ROWA Packet with ACT,Bb,Rb
Ba Bb
=
Ba = Bb
Ba Bb
=
Ba = Bb
Ba Bb
=
Ba = Bb
Ba /
=
Ba = Bb
No limit
a
PRE
b
ACT
No limit
a
WR
b
ACT
No limit
a
RD
b
ACT
t
RR
b
ACT
t
RC
a
ACT
t
RAS
t
RP
a
ACT
b
ACT
a
PRE
t
RDP
+t
RP
t
RDP
t
RP
RD
b
ACT
a
PRE
t
WRP
+t
RP
t
WRP
t
RP
a
WR
b
ACT
a
PRE
t
RP
a
PRE
b
ACT
DQ15..0
CFM
RQ11..0
DQ15..0
DQN15..0
CFM
RQ11..0
DQ15..0
CFM
DQ15..0
CFM
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