參數(shù)資料
型號: EDE5104AJSE
廠商: Elpida Memory, Inc.
英文描述: EDE5104AJSE
中文描述: EDE5104AJSE
文件頁數(shù): 71/77頁
文件大?。?/td> 604K
代理商: EDE5104AJSE
EDE5104AJSE, EDE5108AJSE, EDE5116AJSE
Data Sheet E1043E40 (Ver. 4.0)
71
Asynchronous CKE Low Event
DRAM requires CKE to be maintained high for all valid operations as defined in this data sheet. If CKE
asynchronously drops low during any valid operation DRAM is not guaranteed to preserve the contents of array. If
this event occurs, memory controller must satisfy DRAM timing specification tDELAY before turning off the clocks.
Stable clocks must exist at the input of DRAM before CKE is raised high again. DRAM must be fully re-initialized
(steps 4 through 13) as described in initialization sequence. DRAM is ready for normal operation after the
initialization sequence. See AC Characteristics table for tDELAY specification
tCK
CK
/CK
tDELAY
CKE
CKE asynchronously
drops low
Clocks can be
turned off after
this point
Stable clocks
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相關代理商/技術參數(shù)
參數(shù)描述
EDE5104AJSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5104AJSE-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
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EDE5104GASA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR-II SDRAM
EDE5104GASA-5A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR-II SDRAM