參數(shù)資料
型號(hào)： BR1570
英文描述： WarpLink Reference Design Platform
中文描述： WarpLink參考設(shè)計(jì)平臺(tái)
文件頁數(shù)： 9/24頁
文件大?。?/td> 492K
代理商： BR1570
WarpLink Reference Design Platform
9
For More Information On This Product,
Go to: www.freescale.com
Backplane Design Rules and Layer Stackup
The stackup cross-section of the WarpLink Reference backplane board is shown in Figure 5. Both broadside-coupled differential and single-
ended routes are utilized in the layout. The characteristic impedance of the single-ended nets was designed to be 50 ohms and the
broadside-coupled differential nets 100 ohms (both
±
10%). All differential pairs were routed direct without vias. Vias for single-ended,
multi-drop buses were used only within the connector regions and at the trace ends for termination access. The WarpLink backplane was
designed as a 28-layer, 0.250in thick PCB. The backplane contains six broadside-coupled routing channels (12 layers) and 14 single-ended
routing layers (12 of which are shared with the differential pairs). Broadside-coupled differential routing was chosen over edge-coupled or
uncoupled differential interconnects for its ability to maintain the routing channel within the gigabit connector footprints - board thickness
was not a critical parameter. This is a typical routing scheme when using high-speed differential connectors on backplanes of substantial
board thickness.
Figure 5. WarpLink Reference Backplane Layer Stackup
Dielectric
Metal Weight
Thickness
EMI Grid - 0.375" grid w/ 0.050" trace width
Wtop = 6 mils
Solder Mask
L1
L2
L3
L4
L5
Gnd grid / SE Signal / Pad
Gnd plane
5V / SE Signal
Gnd plane
5V / SE Signal / BCS signal
1 oz. (plated from 0.5 oz.
1.3
5
1.3
11
0.6
11
1.3
8
0.6
10
0.6
8
1.3
8
0.6
10
0.6
8
1.3
8
0.6
10
0.6
8
1.3
5
1.3
5
1.3
5
1.3
8
0.6
10
0.6
8
1.3
8
0.6
10
0.6
8
1.3
8
0.6
10
0.6
8
1.3
11
0.6
11
1.3
5
1.3
D9
D8
D7
D3
1 oz.
0.5 oz.
1 oz.
0.5 oz.
D4
L6
L7
L8
3.3V / SE Signal / BCS signal
5V / SE Signal / BCS signal
Gnd plane
0.5 oz.
D3
D5
1 oz.
0.5 oz.
D6
L9
3.3V / SE Signal / BCS signal
L10
L11
3.3V / SE Signal / BCS signal
0.5 oz.
D5
D3
Gnd plane
1 oz.
0.5 oz.
D4
L12
3.3V / SE Signal / BCS signal
L13
L14
L15
L16
L17
3.3V / SE Signal / BCS signal
0.5 oz.
D3
D2
D1
D2
D3
Gnd plane
1 oz.
3.3V / Gnd plane / 1.5V
3.3V / Gnd plane / 1.5V
Gnd plane
1 oz.
1 oz.
1 oz.
0.5 oz.
D4
L18
3.3V / SE Signal / BCS signal
L19
L20
3.3V / SE Signal / BCS signal
0.5 oz.
D3
D5
Gnd plane
1 oz.
0.5 oz.
D6
L21
3.3V / SE Signal / BCS signal
L22
L23
5V / SE Signal / BCS signal
D5
D3
Gnd plane
1 oz.
0.5 oz.
D4
L24
5V / SE Signal / BCS signal
L25
L26
L27
L28
Gnd grid / SE Signal / Pad
0.5 oz.
D3
D7
D8
D9
Gnd plane
5V / SE Signal
Gnd plane
1 oz.
0.5 oz.
1 oz.
1 oz. (plated from 0.5 oz.
Solder Mask
EMI Grid - 0.375" grid w/ 0.050" trace width
251.6
Wtop = 6 mils
Wtop = 6 mils
Pad
Spwr
Spwr
Spwr
= 25 mils
Layer number / Description
Layer Stack
Wdiff
=5mils
Wdiff
=5mils
Sse
Sdiff
=15 mils
Sdiff
=15 mils
Spwr
S
S
Wse
Wse=9mils
Sdiff
=15 mils
Wdiff
=5mils
Sdiff
=15 mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Wdiff
=5mils
Sse
Sse
Sdiff
=15 mils
S = 25mils
S = 25mils
Wse=9mils
Sse = 20mils
S = 25mils
S = 25mils
S = 25mils
= 25 mils
3.3V
3.3V
3.3V
Gnd
5V
3.3V
Sse
S=25mils
Sdiff
=15 mils
Pad
Wse
Sse= 20mils
Sse = 20mils
Sse = 20mils
Sse = 20mils
Sse = 20mils
S =25 mils
= 20 mils
= 20mils
= 20mils
= 20 mils
Wse=9mils
Wse=9mils
Wse=9mils
Wse=9mils
Wse=9mils
Wse
Wse
Wse
Wse=9mils
Wse=9mils
Wse=9mils
1.5V
1.5V
Wtop = 6 mils
Wse=9mils
Wse=9mils
S = 25mils
3.3V
3.3V
3.3V
3.3V
3.3V
5V
5V
5V
5V
5V
Gnd
Wse
3.3V
FR-4
ε
r
= 4.5
tan(
δ
)= 0.021
Total Thickness (pad to pad) =
Core
Solder mask
Pre-Preg
F
Freescale Semiconductor, Inc.
n
.
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