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參數(shù)資料
| 型號： | W25Q32DWZPIP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| 封裝： | 6 X 5 MM, GREEN, WSON-8 |
| 文件頁數(shù)： | 49/82頁 |
| 文件大?。?/td> | 1155K |
| 代理商： | W25Q32DWZPIP |
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W25Q32DW
- 53 -
Preliminary - Revision C
10.2.29 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in Figure 28a & 28b. Release from
power-down will take the time duration of tRES1 (See AC Characteristics) before the device will resume
normal operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
28. The Device ID values for the W25Q32DW is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in Figure 28c & 28d, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device
will resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (ABh)
Mode 0
Mode 3
tRES1
Power-down current
Stand-by current
Figure 28a. Release Power-down Instruction (SPI Mode)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25Q80VZPIG | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
| W25X80AVDAIZ | 1M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X80ALSSIG | 1M X 8 FLASH 2.7V PROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q32FVSFIG | 功能描述:IC FLASH SPI 32MBIT 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
| W25Q32FVSSIG | 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3V/3.3V 32Mbit 4M x 8bit 8.5ns 8-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:32MB F VERSIOB SPI FLASH 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC |
| W25Q32FVSSIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC |
| W25Q32FVSSIQ | 制造商:Winbond Electronics Corp 功能描述: |
| W25Q32FVZPIG | 功能描述:IC FLASH SPI 32MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
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