參數(shù)資料
型號: W25Q32DWZPIP
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8
封裝: 6 X 5 MM, GREEN, WSON-8
文件頁數(shù): 37/82頁
文件大?。?/td> 1155K
代理商: W25Q32DWZPIP
W25Q32DW
- 42 -
10.2.20 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the
device will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated
by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0)
and at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the
instruction while data is being sent to the device. The Page Program instruction sequence is shown in
Figure 19.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS is
driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (02h)
8
9
10
28
29
30
39
24-Bit Address
23
22
21
3
2
1
*
/CS
CLK
DI
(IO
0)
40
41
42
43
44
45
46
47
Data Byte 2
48
49
50
52
53
54
55
2072
7
6
5
4
3
2
1
0
51
39
0
31
0
32
33
34
35
36
37
38
Data Byte 1
7
6
5
4
3
2
1
*
Mode 0
Mode 3
Data Byte 3
2073
2074
2075
2076
2077
2078
2079
0
Data Byte 256
*
7
6
5
4
3
2
1
0
*
7
6
5
4
3
2
1
0
*
= MSB
*
Figure 19a. Page Program Instruction (SPI Mode)
相關(guān)PDF資料
PDF描述
W25Q80VZPIG 1M X 8 SPI BUS SERIAL EEPROM, DSO8
W25X16AVDAIZ 2M X 8 FLASH 2.7V PROM, PDIP8
W25X40AVSSIG 512K X 8 FLASH 2.7V PROM, PDSO8
W25X80AVDAIZ 1M X 8 FLASH 2.7V PROM, PDIP8
W25X80ALSSIG 1M X 8 FLASH 2.7V PROM, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q32FVSFIG 功能描述:IC FLASH SPI 32MBIT 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x20) 包裝:托盤
W25Q32FVSSIG 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3V/3.3V 32Mbit 4M x 8bit 8.5ns 8-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:32MB F VERSIOB SPI FLASH 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC
W25Q32FVSSIG TR 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC
W25Q32FVSSIQ 制造商:Winbond Electronics Corp 功能描述:
W25Q32FVZPIG 功能描述:IC FLASH SPI 32MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)