參數(shù)資料
型號(hào): W25Q32BVZEAG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 32M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝: 8 X 6 MM, GREEN, WSON-8
文件頁(yè)數(shù): 41/79頁(yè)
文件大?。?/td> 1090K
代理商: W25Q32BVZEAG
W25Q32BV
- 46 -
DO
(IO
1)
7.2.26 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection
table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Mode 0
Mode 3
Instruction (C7h/60h)
High Impedance
Figure 24. Chip Erase Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W3EG6466S335AD4M 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
W3EG7264S335AD4SG 64M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
WF1M32B-120G2UI3A 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, CQFP68
WF1M32B-120H1I3A 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, CPGA66
WE128K32N-150G2TC 128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q32BVZEAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZEIG 制造商:Winbond Electronics Corp 功能描述:32MB SPI FLASH
W25Q32BVZEIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZPAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZPAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI