參數(shù)資料
型號(hào): W25Q32BVZEAG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 32M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝: 8 X 6 MM, GREEN, WSON-8
文件頁(yè)數(shù): 38/79頁(yè)
文件大小: 1090K
代理商: W25Q32BVZEAG
W25Q32BV
Publication Release Date: April 01, 2011
- 43 -
Revision F
DO
(IO
1)
7.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in Figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (20h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 21. Sector Erase Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W3EG6466S335AD4M 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
W3EG7264S335AD4SG 64M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
WF1M32B-120G2UI3A 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, CQFP68
WF1M32B-120H1I3A 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, CPGA66
WE128K32N-150G2TC 128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q32BVZEAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZEIG 制造商:Winbond Electronics Corp 功能描述:32MB SPI FLASH
W25Q32BVZEIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZPAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZPAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI