參數(shù)資料
型號: W25Q32BVZEAG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 32M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝: 8 X 6 MM, GREEN, WSON-8
文件頁數(shù): 19/79頁
文件大?。?/td> 1090K
代理商: W25Q32BVZEAG
W25Q32BV
- 26 -
(IO
1)
To complete the Write Status Register instruction, the /CS pin must be driven high after the eighth or
sixteenth bit of data that is clocked in. If this is not done the Write Status Register instruction will not be
executed. If /CS is driven high after the eighth clock (compatible with the 25X series) the CMP and QE bits
will be cleared to 0.
During non-volatile Status Register write operation (06h combined with 01h), after /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Status
Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after /CS is driven high, the
Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Please refer to 7.1 for detailed Status Register Bit descriptions. Factory default for all status Register bits
are 0.
/CS
CLK
DI
(IO
0)
DO
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (01h)
High Impedance
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
7
6
5
4
3
2
1
0
15
14
13
12
11
10
9
8
Status Register 1 in
Status Register 2 in
Mode 0
Mode 3
**
= MSB
*
Figure 8. Write Status Register Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W3EG6466S335AD4M 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
W3EG7264S335AD4SG 64M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
WF1M32B-120G2UI3A 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, CQFP68
WF1M32B-120H1I3A 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, CPGA66
WE128K32N-150G2TC 128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q32BVZEAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZEIG 制造商:Winbond Electronics Corp 功能描述:32MB SPI FLASH
W25Q32BVZEIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZPAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVZPAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI