參數(shù)資料
型號: W19B160BTBBM
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 16 FLASH 2.7V PROM, 11 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
文件頁數(shù): 30/48頁
文件大小: 534K
代理商: W19B160BTBBM
W19B160BT/B DATA SHEET
- 36 -
9.4.7
Erase and Program Operation
70nS
90nS
PARAMETER
SYM.
Min.
Typ. Max.
Min.
Typ.
Max.
Unit
Write Cycle Timing
TWC
70
-
90
-
ns
Address setup Time
TAS
0
-
0
-
ns
Address Hold Time
TAH
45
-
45
-
ns
Data Setup Time
TDS
35
-
45
-
ns
Data Hold Time
TDH
0
-
0
-
ns
Output Enable Setup Time
TOES
0
-
0
-
ns
Read Recovery Time Before Write
(#OE High to #WE Low)
TGHWL
0
-
0
-
ns
#CE Setup Time
TCS
0
-
0
-
ns
#CE HOLD Time
TCH
0
-
0
-
ns
Write Pulse Width
TWP
35
-
35
-
ns
Write Pulse Width High
TWPH
30
-
30
-
ns
Byte
TPB
-
5
150
-
5
150
us
Programming Time
Word
TPW
-
7
210
-
7
210
us
Sector Erase Time
TSE
-
0.7
10
-
0.7
10
sec
VDD Setup Time (Note 1)
TVCS
50
-
50
-
us
Write Recovery Time from RY/#BY
TRB
0
-
0
-
ns
Program/Erase Valid to RY/#BY Delay
TBUSY
30
-
90
-
90
ns
Notes:
Not 100 % tested
9.4.8
Temporary Sector Unprotect
PARAMETER
SYM.
MIN.
MAX.
UNIT
VID Rise and Fall Time (See Note)
TVIDR
500
-
ns
#RESET setup Time for Temporary Sector Unprotect
TRSP
4
-
us
#RESET Hold Time from RY/#BY High for Temporary
Sector Unprotect
TRRB
4
-
s
Note:
Not 100 % tested
相關(guān)PDF資料
PDF描述
W7MG21M32SVB70BNC 2M X 32 FLASH 3.3V PROM MODULE, 70 ns, SMA80
W3EG7264S202AD4 DDR DRAM MODULE, DMA200
W3E232M16S-200STIG 64M X 16 DDR DRAM, 0.7 ns, PDSO66
W3E232M16S-400STI 64M X 16 DDR DRAM, 0.7 ns, PDSO66
W3EG6418S263D3 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W19B160BTBH7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTBM7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTT7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation
W19B160TB7H7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160TB7M7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory