參數(shù)資料
型號: UPD44165094AF5-E40Y-EQ2
元件分類: SRAM
英文描述: 2M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, PLASTIC, BGA-165
文件頁數(shù): 15/40頁
文件大?。?/td> 388K
代理商: UPD44165094AF5-E40Y-EQ2
22
Data Sheet
M17771EJ3V0DS
μPD44165084A, 44165094A, 44165184A, 44165364A
Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH
(MAX.) without the DLL/PLL circuit being used, if DLL# = LOW. Read latency (RL) is changed to 1.5 clock in
this operation. The AC/DC characteristics cannot be guaranteed, however.
2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. TKC var
(MAX.) indicates a peak-to-peak value.
3. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL/PLL lock retention.
DLL/PLL lock time begins once VDD and input clock are stable.
It is recommended that the device is kept NOP (R# = W# = HIGH) during these cycles.
4. K input is monitored for this operation. See below for the timing.
K
TKC reset
or
TKC reset
5. Echo clock is very tightly controlled to data valid / data hold. By design, there is a
± 0.1 ns variation from
echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.
6. This is a synchronous device. All addresses, data and control lines must meet the specified setup
and hold times for all latching clock edges.
Remarks 1. This parameter is sampled.
2. Test conditions as specified with the output loading as shown in AC Test Conditions
unless otherwise noted.
3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).
4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters.
5. VDDQ is 1.5 V DC.
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