參數(shù)資料
型號： TRK-MPC5634M
廠商： Freescale Semiconductor
文件頁數(shù)： 25/122頁
文件大?。?/td> 0K
描述： TRAK 5634M 144PN R2.1
設(shè)計資源： TRK-MPC5634M Schematic
標(biāo)準包裝： 1
系列： MPC56xx
類型： MCU
適用于相關(guān)產(chǎn)品： MPC5634M
所含物品： 板，線纜，CD，DVD
MPC5634M Microcontroller Data Sheet, Rev. 9
Document revision history
Freescale Semiconductor
120
Rev. 5
(cont.)
04/2010
Changes to flash memory specifications:
TBKPRG 64 KB specification removed (not present in this device)
T64kpperase specification added
Flash module life P/E spec for 32 Kbyte blocks also applies to 64 Kbyte blocks
Pad AC specifications (3.3 V) table updated
Rev. 6
04/2010
“Core Voltage Regulator Controller External Components Preferred Configuration” circuit
diagram updated.
Clarification added to note: Emitter and collector capacitors (6.8
F and 10 F) should
be matched (same type) and ESR should be lower than 200 mW. (Added emphasis
that only 6.8
F emitter capacitors need to be matched with collector capacitor.
220
F emitter capacitors changed to 220 nF.
Rev. 7
4/2010
No specification or product information changes:
Mechanical outline drawings section renamed to “Packages” and restructured.
Rev. 8
01/2011
Removed the 208 BGA package from the device-summary table.
Revised the “PMC Operating conditions and external regulators supply voltage” table.
Revised the “PMC electrical characteristics” table.
Revised the pad AC specifications.
Revised the “DC electrical specifications” table.
Revised the “DSPI LVDS pad specification” table:
Revised the “PLLMRFM electrical specifications” table.
Change to “Temperature sensor electrical characteristics” table:
Accuracy is guaranteed by production test
Revised the “eQADC conversion specifications (operating)” table.
Changes to “Calibration bus operation timing“ table:
CLKOUT period is guaranteed by production test. All other parameters are guaranteed
by design
Changes to “Program and erase specifications“ table in “Flash memory electrical
characteristics” section.
Deleted Bank Program (512KB) (TBKPRG) parameter
TYP P/E values added for 32- and 64 KB blocks and for 128 KB blocks.
Changes to Recommended operating characteristics for external power transistor:
VCESAT should be between 200 and 600 mV
VBE should be 0.4V to 1.0V
Removed footnote 8 from Vddeh in Maximum ratings.
Deleted engineering names for pads in Power UP/DOWN Sequencing Section
Changed “sin_c” to DSPI_C_SIN” and “sck_c” to DSPI_C_SCK” on 144 pin LQFP
package.
Updated the “Electromagnetic Interference Characteristics” table to reflect new parameter
levels, test conditions.
In the “APC, RWSC, WWSC settings vs. frequency of operation” table, changed 82 MHz
entry for WWC from “11” to “01”, added an extra row for “All 111 111 11”
Table 43. Revision history (continued)
Revision
Date
Description of Changes
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