參數(shù)資料
型號(hào)： TRK-MPC5634M
廠商： Freescale Semiconductor
文件頁數(shù)： 82/122頁
文件大小： 0K
描述： TRAK 5634M 144PN R2.1
設(shè)計(jì)資源： TRK-MPC5634M Schematic
標(biāo)準(zhǔn)包裝： 1
系列： MPC56xx
類型： MCU
適用于相關(guān)產(chǎn)品： MPC5634M
所含物品： 板，線纜，CD，DVD
MPC5634M Microcontroller Data Sheet, Rev. 9
Electrical characteristics
Freescale Semiconductor
62
B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and Its Application
in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212-220.
4.4
Electromagnetic Interference (EMI) characteristics
4.5
Electromagnetic static discharge (ESD) characteristics
Table 11. EMI testing specifications1
1 IEC Classification Level: L = 24dBuV; K = 30dBuV.
Symbol
Parameter
Conditions
fOSC/fBUS
Frequency
Level
(Typ)
Unit
Radiated
Emissions
VEME
Device
Configuration, test
conditions and EM
testing per standard
IEC61967-2; Supply
Voltage = 5.0V DC,
Ambient
Temperature =
25°C, Worst-case
Orientation
Oscillator
Frequency = 8
MHz;
System Bus
Frequency = 80
MHz;
No PLL
Frequency
Modulation
150 kHz – 50 MHz
26
dB
V
50–150 MHz
24
150–500 MHz
24
500–1000 MHz
21
IEC Level
K
—
Oscillator
Frequency = 8
MHz;
System Bus
Frequency = 80
MHz;
1% PLL
Frequency
Modulation
150 kHz – 50 MHz
20
dB
V
50–150 MHz
19
150–500 MHz
14
500–1000 MHz
7
IEC Level
L
—
Table 12. ESD ratings1,2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification
requirements, which includes the complete DC parametric and functional testing at room temperature and hot
temperature.”
Symbol
Parameter
Conditions
Value
Unit
—
SR ESD for Human Body Model (HBM)
—
2000
V
R1
SR HBM circuit description
—
1500
CSR
—
100
pF
—
SR ESD for field induced charge Model (FCDM) All pins
500
V
Corner pins
750
—
SR Number of pulses per pin
Positive pulses (HBM)
1
—
Negative pulses (HBM)
1
—
SR Number of pulses
—
1
—
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