參數(shù)資料
型號(hào)： ST7PLU09MCTRE
廠商： STMICROELECTRONICS
元件分類： 微控制器/微處理器
英文描述： 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO8
封裝： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件頁(yè)數(shù)： 124/124頁(yè)
文件大?。?/td> 1995K
代理商： ST7PLU09MCTRE
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ST7LUS5, ST7LU05, ST7LU09
Electrical characteristics
12.6
Memory characteristics
Table 70.
General timings
Symbol
Parameter(1)
1.
Data based on characterization, not tested in production
Conditions
Min
Typ(2)
2.
Data based on typical application software
Max
Unit
tc(INST)
Instruction cycle time
fCPU = 8 MHz
23
12
tCPU
250
375
1500
ns
tv(IT)
Interrupt reaction time(3)
tv(IT) = tc(INST) + 10
3.
Time measured between interrupt event and interrupt vector fetch.
t
c(INST) is the number of tCPU cycles
needed to finish the current instruction execution.
10
22
tCPU
1.25
2.75
s
Table 71.
Auto wake-up RC oscillator
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD(RCAWU) Supply voltage range
3.0
5.0
5.5
V
TA(RCAWU)
Operating temperature range
-40
25
125
°C
IDD(RCAWU) Current consumption
(1)
1.
Data guaranteed by Design
Without prescaler
2.0
8.0
14.0
A
AWU RC switched off
0
fOSC(RCAWU) Output frequency
20
33
60
kHz
Table 72.
RAM and hardware registers(1)
1.
TA = -40°C to 125°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(2)
2.
Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
Halt mode (or RESET)
1.6
V
Table 73.
Flash program memory
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
VDD
Operating voltage for Flash
write/erase
3.0
5.5
V
tprog
Programming time for 1~32
bytes(2)
TA = -40 to +125°C
5
10
ms
Programming time for 1 Kbyte
TA = +25°C
0.16
0.32
s
tRET
Data retention(3)
TA = +55°C
(4)
20
years
NRW
Write/erase cycles
TA = +25°C
10k(5)
cycles
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