參數(shù)資料
型號： SGW5N60RUFDTM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
中文描述： 8 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝： D2PAK-3
文件頁數(shù)： 3/10頁
文件大?。?/td> 646K
代理商： SGW5N60RUFDTM
SGW5N60RUFD Rev. A1
S
G
W5N60RUF
D
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C = 25°C unless otherwise noted
Electrical Characteristics of DIODE T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
V
B
VCES/
T
J
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 5mA, VCE = VGE
5.0
6.0
8.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 5A,
VGE = 15V
--
2.2
2.8
V
IC = 8A,
VGE = 15V
--
2.5
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
354
--
pF
Coes
Output Capacitance
--
67
--
pF
Cres
Reverse Transfer Capacitance
--
14
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 5A,
RG = 40, VGE = 15V,
Inductive Load, TC = 25°C
--
13
--
ns
tr
Rise Time
--
24
--
ns
td(off)
Turn-Off Delay Time
--
34
50
ns
tf
Fall Time
--
136
200
ns
Eon
Turn-On Switching Loss
--
88
--
uJ
Eoff
Turn-Off Switching Loss
--
107
--
uJ
Ets
Total Switching Loss
--
195
280
uJ
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 5A,
RG = 40, VGE = 15V,
Inductive Load, TC = 125°C
--
13
--
ns
tr
Rise Time
--
26
--
ns
td(off)
Turn-Off Delay Time
--
40
60
ns
tf
Fall Time
--
250
350
ns
Eon
Turn-On Switching Loss
--
103
--
uJ
Eoff
Turn-Off Switching Loss
--
220
--
uJ
Ets
Total Switching Loss
--
323
--
uJ
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@
TC = 100°C
10
--
us
Qg
Total Gate Charge
VCE = 300 V, IC = 5A,
VGE = 15V
--
16
24
nC
Qge
Gate-Emitter Charge
--
3
6
nC
Qgc
Gate-Collector Charge
--
7
14
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VFM
Diode Forward Voltage
IF = 8A
TC = 25°C
--
1.4
1.7
V
TC = 100°C
--
1.3
--
trr
Diode Reverse Recovery Time
IF = 8A,
di/dt = 200 A/us
TC = 25°C
--
37
55
ns
TC = 100°C
--
55
--
Irr
Diode Peak Reverse Recovery
Current
TC = 25°C
--
3.5
5.0
A
TC = 100°C
--
4.5
--
Qrr
Diode Reverse Recovery Charge
TC = 25°C
--
65
138
nC
TC = 100°C
--
124
--
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相關代理商/技術參數(shù)
參數(shù)描述
SGW5N60RUFTM 功能描述:IGBT 晶體管 600V/5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW6N60UF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGW6N60UFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGW6N60UFDTM 功能描述:IGBT 晶體管 600V/3A/W/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW6N60UFTM 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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