參數(shù)資料
型號： SGW5N60RUFDTM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
中文描述： 8 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝： D2PAK-3
文件頁數(shù)： 10/10頁
文件大?。?/td> 646K
代理商： SGW5N60RUFDTM
Product Folder - Fairchild P/N SGW5N60RUFD - Discrete, Short Circuit Rated IGBT with Diode
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SGW5N60RUFD
Discrete, Short Circuit Rated IGBT with Diode
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Contents
General description
Fairchild's RUFD series of Insulated Gate
Bipolar Transistors (IGBTs) provide low
conduction and switching losses as well as
short circuit ruggedness. The RUFD series is
designed for applications such as motor
control, uninterrupted power supplies (UPS)
and general inverters where short circuit
ruggedness is a required feature.
Features
q
Short Circuit Rated 10us @ T C =
100°C, V GE = 15V
q
High Speed Switching
q
Low Saturation Voltage : V CE(sat) = 2.2
V @ I C = 5A
q
High Input Impedance
q
CO-PAK, IGBT with FRD : t rr = 37ns
(typ.)
Applications
AC &DC Motor controls, General
Purpose Inverters, Robotics, Servo
Controls
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Datasheet
file:///C|/PDF/SGW5N60RUFD.html (1 of 2) [27-Jul-02 6:02:00 PM]
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGW5N60RUFTM 功能描述:IGBT 晶體管 600V/5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW6N60UF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGW6N60UFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGW6N60UFDTM 功能描述:IGBT 晶體管 600V/3A/W/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGW6N60UFTM 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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