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參數(shù)資料
| 型號(hào)： | SH8K2TB |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 30 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | SH8K2TB |
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
4V Drive Nch+Nch MOSFET
SH8K2
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications
Inner circuit
Package
Code
Taping
Basic ordering unit (pieces)
SH8K2
TB
2500
Type
Absolute maximum ratings (Ta=25
C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
V
VDSS
Symbol
V
VGSS
A
ID
A
IDP
A
IS
A
ISP
W
PD
°C
Tch
°C
Tstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
30
±20
±6.0
±24
1.6
6.4
2
150
55 to +150
Limits
1
2
1 Pw 10μs, Duty cycle 1%
2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
°C / W
Rth (ch-a)
62.5
Parameter
Symbol
Limits
Unit
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Each lead has same dimensions
SOP8
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) (2) (3) (4)
(8) (7) (6) (5)
2
1
2
1
(8)
(7)
(1)
(2)
(6)
(5)
(3)
(4)
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SH8K2TB1 | 功能描述:MOSFET Nch+Nch 30V 6A MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SH8K3 | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:4V Drive Nch+Nch MOSFET |
| SH8K32 | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:4V Drive Nch+Nch MOSFET |
| SH8K32TB | 制造商:ROHM Semiconductor 功能描述: |
| SH8K32TB1 | 功能描述:MOSFET Nch+Nch 60V 4.5A MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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