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參數(shù)資料
| 型號： | S29PL032J65BFI150 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 65 ns, PBGA56 |
| 封裝： | 7 X 9 MM, LEAD FREE, FBGA-56 |
| 文件頁數(shù)： | 45/94頁 |
| 文件大?。?/td> | 949K |
| 代理商： | S29PL032J65BFI150 |
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July 29, 2005 S29PL-J_00_A8
S29PL-J
3
Advance
Information
erase and programming circuitry. Write cycles also internally latch addresses and data needed
for the programming and erase operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass
mode facilitates faster programming times by requiring only two write cycles to program data
instead of four. Device erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the
DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been
completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
Hardware data protection measures include a low VCC detector that automatically inhibits
write operations during power transitions. The hardware sector protection feature disables both
program and erase operations in any combination of sectors of memory. This can be achieved
in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any pe-
riod of time to read data from, or program data to, any sector that is not selected for erasure.
True background erase can thus be achieved. If a read is needed from the Secured Silicon Sector
area (One Time Program area) after an erase suspend, then the user must use the proper com-
mand sequence to enter and exit this region.
The Program Suspend/Program Resume feature enables the user to hold the program op-
eration to read data from any sector that is not selected for programming. If a read is needed
from the Secured Silicon Sector area, Persistent Protection area, Dynamic Protection area, or the
CFI area, after a program suspend, then the user must use the proper command sequence to
enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified
amount of time, the device enters the automatic sleep mode. The system can also place the
device into the standby mode. Power consumption is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnel-
ing. The data is programmed using hot electron injection.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL032J70BAI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BAI122 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BAW120 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BFI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
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