參數(shù)資料
型號(hào)： S29PL032J65BFI150
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 65 ns, PBGA56
封裝： 7 X 9 MM, LEAD FREE, FBGA-56
文件頁(yè)數(shù)： 23/94頁(yè)
文件大?。?/td> 949K
代理商： S29PL032J65BFI150
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not
design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
Publication Number S29PL-J_00
Revision A Amendment 8 Issue Date July 29, 2005
Distinctive Characteristics
Architectural Advantages
128/128/64/32 Mbit Page Mode devices
— Page size of 8 words: Fast page read access from random
locations within the page
Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and program
operations for battery-powered applications
Dual Chip Enable inputs (only in PL129J)
— Two CE# inputs control selection of each half of the memory
space
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while executing
erase/program functions in another bank
— Zero latency switching from write to read operations
FlexBank Architecture (PL127J/PL064J/PL032J)
— 4 separate banks, with up to two simultaneous operations per
device
—Bank A:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
—Bank B:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
—Bank C:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
—Bank D:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
FlexBank Architecture (PL129J)
— 4 separate banks, with up to two simultaneous operations per
device
— CE#1 controlled banks:
Bank 1A: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Bank 1B: PL129J - 48Mbit (32Kw x 96)
— CE#2 controlled banks:
Bank 2A: PL129J - 48 Mbit (32Kw x 96)
Bank 2B: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Enhanced VersatileI/O (VIO) Control
— Output voltage generated and input voltages tolerated on all
control inputs and I/Os is determined by the voltage on the
VIO pin
—VIO options at 1.8 V and 3 V I/O for PL127J and PL129J
devices
—3V VIO for PL064J and PL032J devices
Secured Silicon Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 110 nm process technology
Data Retention: 20 years typical
Cycling Endurance: 1 million cycles per sector typical
Performance Characteristics
High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 17 mA program/erase current
— 0.2 A typical standby mode current
Software Features
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F, Am29LV, Am29DL, and
AM29PDL families and MBM29QM/RM, MBM29LV, MBM29DL,
MBM29PDL families
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
Program Suspend / Program Resume
— Suspends a program operation to allow read operation from
sectors other than the one being programmed
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
Hardware Features
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
WP#/ ACC (Write Protect/Acceleration) input
—At VIL, hardware level protection for the first and last two 4K
word sectors.
—At VIH, allows removal of sector protection
—At VHH, provides accelerated programming in a factory setting
Persistent Sector Protection
— A command sector protection method to lock combinations of
individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at VCC level
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
Package options
— Standard discrete pinouts
11 x 8 mm, 80-ball Fine-pitch BGA (PL127J) (VBG080)
8.15 x 6.15 mm, 48-ball Fine pitch BGA (PL064J/PL032J)
(VBK048)
— MCP-compatible pinout
8 x 11.6 mm, 64-ball Fine-pitch BGA (PL127J)
7 x 9 mm, 56-ball Fine-pitch BGA (PL064J and PL032J)
Compatible with MCP pinout, allowing easy integration of RAM
into existing designs
— 20 x 14 mm, 56-pin TSOP (PL127J) (TS056)
S29PL-J
128/128/64/32 Megabit (8/8/4/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous-Read/Write
Flash Memory with Enhanced VersatileIO Control
Data Sheet
ADVANCE
INFORMATION
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S29PL032J70BFI120(E) 制造商:Spansion 功能描述:Cut Tape
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