- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299877 > S29GL032N90BFI32 (SPANSION LLC) 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 PDF資料下載
參數(shù)資料
| 型號： | S29GL032N90BFI32 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 8.15 X 6.15 MM, LEAD FREE, FBGA-48 |
| 文件頁數(shù)： | 49/81頁 |
| 文件大小： | 3095K |
| 代理商： | S29GL032N90BFI32 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁當(dāng)前第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit Flash Family
53
Data
She e t
Table 10.3 Command Definitions (x8 Mode, BYTE# = VIL)
Command Sequence
Cyc
le
s
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1RA
RD
Reset (Note 7)
1XXX
F0
A
u
toselect
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (Note 9)
6
AAA
AA
555
55
AAA
90
X02
7E
X1C
X1E
Device ID
4
AAA
AA
555
55
AAA
90
X02
Secured Silicon Sector Factory Protect
4
AAA
AA
555
55
AAA
90
X06
Sector Protect Verify
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Enter Secured Silicon Sector Region
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (Note 12)
3
AAA
AA
555
55
SA
25
SA
BC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
AAA
AA
555
55
AAA
F0
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Unlock Bypass
AAA
AA
555
55
AAA
20
Unlock Bypass Program
XXX
A0
PA
PD
Unlock Bypass RESET
XXX
90
XXX
00
Program/Erase Suspend (Note 14)
1
XXX
B0
Program/Erase Resume (Note 15)
1XXX
30
CFI Query (Note 16)
1AA
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or
CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page
as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
Notes
1. See Table 8.1 on page 17 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
AAA as shown in table, address bits above A11 are don’t care.
5. Unless otherwise noted, address bits A21–A11 are don’t cares.
6. No unlock or command cycles required when device is in read mode.
7. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
8. Fourth cycle of autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. See Autoselect Command Sequence
on page 42 for more information.
9. For S29GL064N and S29GL032A Device ID must be read in three cycles.
10. Refer to Table 8.9 on page 29, for data indicating Secured Silicon Sector
factory protect status.
11. Data is 00h for an unprotected sector and 01h for a protected sector.
12. Total number of cycles in command sequence is determined by number of
bytes written to write buffer. Maximum number of cycles in command
sequence is 37, including Program Buffer to Flash command.
13. Command sequence resets device for next command after aborted write-
to-buffer operation.
14. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid
only during a sector erase operation.
15. Erase Resume command is valid only during Erase Suspend mode.
16. Command is valid when device is ready to read array data or when device
is in autoselect mode.
17. Refer to Table 8.9 on page 29, for individual Device IDs per device density
and model number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S2A | SURFACE MOUNT RECTIFIER |
| S2B | SURFACE MOUNT RECTIFIER |
| S2C1R-1-5-H | 4000 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.7 dB INSERTION LOSS |
| S2D | SURFACE MOUNT RECTIFIER |
| S2G | SURFACE MOUNT RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032N90DFI020 | 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:32Mb （4M x 8，2M x 16） 寫周期時間 - 字，頁:90ns 訪問時間:90ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64 球加強型 BGA（9x9） 標(biāo)準(zhǔn)包裝:260 |
| S29GL032N90DFI023 | 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:32Mb （4M x 8，2M x 16） 寫周期時間 - 字，頁:90ns 訪問時間:90ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64 球加強型 BGA（9x9） 標(biāo)準(zhǔn)包裝:1 |
| S29GL032N90FAI030 | 制造商:Spansion 功能描述:IC, FLASH - Trays |
| S29GL032N90FAI040 | 功能描述:閃存 32Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL032N90FFI010 | 功能描述:閃存 32Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。