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參數(shù)資料
| 型號： | S29GL032N90BFI32 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 8.15 X 6.15 MM, LEAD FREE, FBGA-48 |
| 文件頁數(shù)： | 42/81頁 |
| 文件大小： | 3095K |
| 代理商： | S29GL032N90BFI32 |
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October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit Flash Family
47
Data
She e t
Figure 10.3 Program Suspend/Program Resume
10.6
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 10.1 on page 51 and Table 10.3 on page 53 show the
address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2.
Refer to Write Operation Status on page 55 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If this occurs, the chip erase command sequence should be
reinitiated once the device returns to reading array data, to ensure data integrity.
Figure 10.4 on page 49 illustrates the algorithm for the erase operation. Refer to Table 15.3 on page 67 for
parameters, and Figure 15.7 on page 69 for timing diagrams.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Write Program Resume
Command Sequence
Read data as
required
Done
reading?
No
Yes
Write address/data
XXXh/30h
Device reverts to
operation prior to
Program Suspend
Write address/data
XXXh/B0h
Wait 20
μs
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| S29GL032N90DFI020 | 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:32Mb （4M x 8，2M x 16） 寫周期時(shí)間 - 字，頁:90ns 訪問時(shí)間:90ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64 球加強(qiáng)型 BGA（9x9） 標(biāo)準(zhǔn)包裝:260 |
| S29GL032N90DFI023 | 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:32Mb （4M x 8，2M x 16） 寫周期時(shí)間 - 字，頁:90ns 訪問時(shí)間:90ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64 球加強(qiáng)型 BGA（9x9） 標(biāo)準(zhǔn)包裝:1 |
| S29GL032N90FAI030 | 制造商:Spansion 功能描述:IC, FLASH - Trays |
| S29GL032N90FAI040 | 功能描述:閃存 32Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL032N90FFI010 | 功能描述:閃存 32Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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