參數(shù)資料
型號(hào): PHM25NQ10T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS standard level FET
中文描述: 30.7 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 284K
代理商: PHM25NQ10T
Philips Semiconductors
PHM25NQ10T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 September 2003
6 of 13
9397 750 11843
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aj37
0
10
20
30
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
4.5 V
Tj = 25
°
C
VGS = 4 V
10 V
4.8 V
5 V
5.5 V
6 V
7 V
03aj39
0
10
20
30
0
2
4
6
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
150
°
C
03aj38
0
20
40
60
0
10
20
30
ID (A)
RDSon
(m
)
6 V
7 V
10 V
VGS = 5 V
Tj = 25
°
C
5.5 V
03al21
0
0.5
1
1.5
2
2.5
3
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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