參數(shù)資料
型號(hào)： PHM25NQ10T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS standard level FET
中文描述： 30.7 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8
文件頁數(shù)： 11/13頁
文件大?。?/td> 284K
代理商： PHM25NQ10T
Philips Semiconductors
PHM25NQ10T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 September 2003
11 of 13
9397 750 11843
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9.
Revision history
Table 6:
Rev Date
03
Revision history
CPCN
20030911
Description
Product data (9397 750 11843)
Modifications:
Section 3 “Ordering information”
Addition of ordering information.
Section 4 “Limiting values”
Addition of E
DS(AL)S.
Section 4 “Limiting values”
Addition of E
DS(AL)R.
Section 8 “Soldering”
Addition of soldering footprint.
Preliminary data (9397 750 10884)
Modifications:
Section 5 “Thermal characteristics”
Thermal resistance modified.
Section 5 “Thermal characteristics” Figure 4
modified.
Section 4 “Limiting values”
Drain current (DC) modified.
Section 4 “Limiting values” Figure 3
modified.
Section 6 “Characteristics”
R
DSon
T
j
= 150
°
C modified.
Section 6 “Characteristics” Figure 6
replaced.
Section 6 “Characteristics” Figure 8
modified.
Section 6 “Characteristics”
Gate charge test condition and typical values modified.
Section 7 “Package outline”
Mounting base repositioned.
Preliminary data (9397 750 09866)
-
02
20030129
-
01
20020530
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHM25NQ10T,518 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHM2825DL,115 制造商:NXP Semiconductors 功能描述:PHM2825DL/MLFPAK/REEL7// - Tape and Reel
PHM2930DL,115 制造商:NXP Semiconductors 功能描述:PHM2930DL/MLFPAK/REEL7// - Tape and Reel
PHM3 制造商:Panduit Corp 功能描述:TY-WRAP MACHINE HOSE
PHM3030DL,115 制造商:NXP Semiconductors 功能描述:PHM3030DL/MLFPAK/REEL7// - Tape and Reel
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