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參數(shù)資料
| 型號： | PHM25NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 30.7 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 284K |
| 代理商： | PHM25NQ10T |
Philips Semiconductors
PHM25NQ10T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 September 2003
2 of 13
9397 750 11843
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
[2]
Duty cycle limited by maximum junction temperature.
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
QLPAK
Description
Plastic surface mounted package; no leads; 8 terminals.
Version
SOT685
PHM25NQ10T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
100
100
±
20
30.7
19.4
60
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
30.7
60
A
A
unclamped inductive load;
I
D
= 9.9 A; t
p
= 0.21 ms; V
DD
≤
100 V;
R
GS
= 50
; V
GS
= 10 V; starting T
j
= 25
°
C
unclamped inductive load;
I
D
= 1 A; t
p
= 0.021 ms; V
DD
≤
100 V;
R
GS
= 50
; V
GS
= 10 V
-
170
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
1.70
mJ
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