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參數資料
| 型號： | PHM25NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 30.7 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8 |
| 文件頁數： | 5/13頁 |
| 文件大小： | 284K |
| 代理商： | PHM25NQ10T |
Philips Semiconductors
PHM25NQ10T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 September 2003
5 of 13
9397 750 11843
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 80 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 10 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
100
89
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
2
1.2
-
3
-
-
4
-
4.4
V
V
V
I
DSS
drain-source leakage current
-
-
-
-
-
10
1
100
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
26.5
58.3
30
66
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 10 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 25 A; V
DD
= 50 V; V
GS
= 10 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
26.6
8.4
6.6
1800 -
275
80
18
10
42
29
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 50 V; R
L
= 56
; V
GS
= 10 V; R
G
= 5.6
-
-
-
0.85
70
95
1.2
-
-
V
ns
nC
I
S
= 4 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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