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參數(shù)資料
| 型號(hào)： | PHN1011 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 11 A, 25 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLATIC, SO-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 115K |
| 代理商： | PHN1011 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHN1011
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 25 V
’Trench’ technology
Low on-state resistance
Fast switching
High thermal cycling performance
Low-profile surface mount
package
Logic level compatible
I
D
= 11 A
R
DS(ON)
≤
11 m
(V
GS
= 10 V)
R
DS(ON)
≤
13.5 m
(V
GS
= 5 V)
GENERAL DESCRIPTION
PINNING
SOT96-1 (SO8)
N-channel
logic
transistor in a surface mounting
plastic
package
technology. The combination of
very low on-state resistance and
low switching losses make this
device the optimum choice in high
speed computer motherboard d.c.
to d.c. converters.
enhancement
field-effect
mode
power
PIN
DESCRIPTION
level
1-3
source
using
’
trench
’
4
gate
5-8
drain
The PHN1011 is supplied in the
SOT96-1 (SO8) surface mounting
package
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DSS
V
DGR
PARAMETER
Drain-source voltage
Drain-gate voltage
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C;
R
GS
= 20 k
-
MIN.
-
-
MAX.
25
25
UNIT
V
V
V
GS
V
GSM
Gate-source voltage (DC)
Gate-source voltage (pulse peak
value)
Drain current (t
p
≤
10 s)
-
-
±
15
±
20
V
V
I
D
T
a
= 25 C
T
a
= 70 C
T
a
= 25 C
T
a
= 25 C
T
a
= 70 C
-
-
-
-
-
-
11
9
44
2.5
1.6
150
A
A
A
W
W
C
I
DM
P
tot
Drain current (pulse peak value)
Total power dissipation
T
j
, T
stg
Operating junction and storage
temperature
- 55
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-a
Thermal resistance junction
to ambient
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
Surface mounted, FR4 board, t
≤
10 sec
TYP.
-
MAX.
50
UNIT
K/W
Surface mounted, FR4 board
150
-
K/W
d
g
s
1
2
3
4
5
6
7
8
pin 1 index
June 1999
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHN1013 | N-channel enhancement mode MOS transistor |
| PHN1015 | N-channel TrenchMOS transistor Logic level |
| PHN1018 | KPT00E14-5PF42 |
| PHN103 | N-channel enhancement mode MOS transistor |
| PHN110 | N-channel enhancement mode MOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN1013 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN1013T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| PHN1015 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level |
| PHN1018 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN1018/T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET SOT-96 |
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