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參數(shù)資料
| 型號： | NCP4330DR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | Post Regulation Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | LEAD FREE, DSO-8 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大?。?/td> | 123K |
| 代理商： | NCP4330DR2G |
NCP4330
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
BST
Bootstrap Input
0.3, +40
V
RST
Reset Input
0.3, +5.0
V
C_ramp
Timing Capacitor Node (Note 1)
0.3, V
rampHL
V
I_ramp
Regulation Current Input (Note 1)
0.3, Vcl
V
V
DD
Supply Voltage
0.3, +20
V
R
JA
Thermal Resistance
180
°
C/W
T
J
Operating Junction Temperature Range (Note 2)
40, +125
°
C
T
Jmax
Maximum Junction Temperature
150
°
C
T
Smax
Storage Temperature Range
65 to +150
°
C
T
Lmax
Lead Temperature (Soldering, 10 s)
300
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
and Vcl are the internal clamp levels of pins 4 and 5 respectively.
2. The maximum junction temperature should not be exceeded.
ELECTRICAL CHARACTERISTICS
(V
DD
= 10 V, V
BST
= 25 V, T
J
from 25
°
C to +125
°
C, unless otherwise specified.)
Symbol
Characteristic
Min
Typ
Max
Unit
HighSide Output Stage
V
HS_H
HighSide Output Voltage in High State @ Isource = 100 mA
22.5
23.5
V
V
HS_L
HighSide Output Voltage in Low State @ Isink = 100 mA
0.9
1.5
V
I
source_HS
Current Capability of the HighSide Drive Output in High State
0.5
A
I
sink_HS
Current Capability of the HighSide Drive Output in Low State
0.75
A
t
rHS
HighSide Output Voltage Rise Time from 0.5 V to 12 V (C
L
= 1.0 nF)
25
ns
t
fHS
HighSide Output Voltage Fall Time from 20 V to 0.5 V (C
L
= 1.0 nF)
25
ns
T
LSHS
Delay from LowSide Gate Drive Low (High) to HighSide Drive High (Low)
100
ns
LowSide Output Stage
V
LS_H
LowSide Output Voltage in High State @ Isource = 500 mA
7.4
8.2
V
V
LS_L
LowSide Output Voltage in Low State @ Isink = 750 mA
1.3
1.7
V
I
source_LS
Current Capability of the LowSide Drive Output in High State
0.5
A
I
sink_LS
Current Capability of the LowSide Drive Output in Low State
0.75
A
t
rLS
LowSide Output Voltage Rise Time from 0.5 V to 7.0 V (C
L
= 2.0 nF)
25
ns
t
fLS
LowSide Output Voltage Fall Time from 9.5 V to 0.5 V (C
L
= 2.0 nF)
25
ns
Ramp Control
I
charge
C_ramp Current
@ Ipin5 = 100 A
@ Ipin5 = 1.5 mA
90
1400
102
1590
110
1800
A
Vcl
Pin5 Clamp Voltage @ Ipin5 = 1.5 mA
0.7
1.4
2.1
V
Vref
L
Ramp Control Reference Voltage, Vpin4 Falling
1.3
1. 5
1.7
V
Vref
H
Ramp Control Reference Voltage, Vpin4 Rising
2.25
2.5
2.75
V
V
rampHL
Ramp Voltage Maximum Value @ Ipin5 = 1.5 mA
3.2
3.6
4.2
V
V
rampLL
Ramp Voltage Low Voltage @ Ipin5 = 1.5 mA
100
mV
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