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參數(shù)資料
| 型號： | NCP4330DR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | Post Regulation Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | LEAD FREE, DSO-8 |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 123K |
| 代理商： | NCP4330DR2G |
NCP4330
http://onsemi.com
14
2. HighSide Turn Off:
The highside MOSFET turns in a very soft way (no
current, no voltage). The turn off drive is in fact designed to
face the high dV/dt that occurs when the MOSFET Q1
abruptly turns on. The current capability has been set to
750 mA so that a 30 V variation in 10 ns cannot parasitically
switch on a highside MOSFET exhibiting a 250 pF Crss.
4.5010 M
4.5015 M
4.5020 M
4.5025 M
4.5030 M
Figure 31. HighSide MOSFET Turn Off
Time in Secs
Vin
lind
i(l1)
vin1
ihs
vdshs
hs_drv
I
Q
V
Q
40.0
20.0
0
20.0
40.0
l
0
4.00
8.00
12.0
16.0
i
320
240
160
80.0
0
i
0
20.0
40.0
60.0
80.0
v
8.00
4.00
0
4.00
8.00
v
HS_DRV
3. Input Voltage Limitation:
Traditional highside drivers turn off the MOSFET they
control, by forcing nearly 0 V between gate and source. The
NCP4330 highside stage is not referenced to the MOSFET
source but to ground, and the HS MOSFET is forced off by
grounding its gate. This technique that saves the pin that is
traditionally connected to the MOSFET source, allows a
robust turn off of the power switch. In effect, the lowside
MOSFET that is ON when the highside is off, forces the
Highside MOSFET source to approximately 0 V.
However the highside MOSFET turn on is preceded by
a 100 ns phase during which both the lowside and
highside power switches are off. During this 100 ns phase,
the drain source voltage of the lowside MOSFET may get
high, given that in light load operation, the L2 coil current
may get negative and flow from the load toward the input
through the HS MOSFET body diode. In this case, the gate
source voltage of the highside MOSFET becomes negative
and substantially equal to the input voltage amplitude of the
postregulator in absolute value.
Therefore, the maximum value of the pulsed input
voltage should be chosen lower than the maximum
sourcegate voltage the HS MOSFET can sustain.
Traditional MOSFET Vgs maximum ratings are generally
+/20 V. Therefore, with this kind of MOSFETs, the input
voltage must keep below 20 V (possible spikes being
included).
Undervoltage Lockout
An undervoltage lockout comparator is incorporated to
guarantee that the device is fully functional before enabling
the output stages. The NCP4330 starts to operate when the
power supply V
DD
exceeds 5.8 V. A 600 mV hysteresis
avoids that some noise on the V
DD
might produce some
erratic turns on and off of the device. When the NCP4330
detects an undervoltage lockout condition, it keeps both the
highside and lowside drivers in low state.
The undervoltage lockout has a 4.9 V minimum threshold
(falling). As a consequence, around 3.4 V are available on
the driver outputs to force on the MOSFET. Such a level
allows to properly drive most MOSFETs.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| NCP4331 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Synchronous Buck Controller for High Efficiency Post Regulation |
| NCP4331DBR2G | 功能描述:IC REG CTRLR BUCK PWM 16-TSSOP RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:100% 電源電壓:8.2 V ~ 30 V 降壓:無 升壓:無 回掃:是 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:0°C ~ 70°C 封裝/外殼:8-DIP（0.300"，7.62mm） 包裝:管件 產(chǎn)品目錄頁面:1316 (CN2011-ZH PDF) |
| NCP4331DR2G | 功能描述:功率驅(qū)動器IC PWM CONTROLLER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| NCP433FCT2G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.5A Ultra-Small Controlled Load Switch with Auto-Discharge Path |
| NCP434 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2A Ultra-Small Controlled Load Switch with |
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