參數(shù)資料
型號: NCP4330DR2G
廠商: ON SEMICONDUCTOR
元件分類: MOSFETs
英文描述: Post Regulation Driver
中文描述: BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: LEAD FREE, DSO-8
文件頁數(shù): 12/18頁
文件大?。?/td> 123K
代理商: NCP4330DR2G
NCP4330
http://onsemi.com
12
2. LowSide MOSFET Turn Off:
The highside MOSFET turns on about 100 ns after the
lowside one is switched off. During this time when both
switches are off, the body diode of the lowside MOSFET
derives the inductor current (in nominal load condition,
when the coil current is positive, i.e., it flows toward the
output). As a result, the LS MOSFET turns off while its
drainsource voltage keeps around zero due to its body
diode activation.
Again, the energy Qg to be supplied is then approximately
half its value if the drain source voltage was high.
The necessary current capability is then:
Ils
off
1
2*25 nC
25 ns
, that is 500 mA.
High dV/dt occur in the application. When the highside
MOSFET turns on, the drainsource voltage of the lowside
MOSFET sharply increases, producing a huge current
through the Crss capacitor. This current may produce some
parasitic turn on of the LS MOSFET if the driver impedance
is not low enough to absorb this current without significant
increase of the driver voltage. The driver current capability
has then been increased to 750 mA so that it can effectively
face a 30 V variation in 10 ns with a MOSFET exhibiting a
250 pF Crss.
i(l1)
vin1
v(vsn)
irl
ls_drv
4.4990 M
4.4995 M
4.5000 M
Time in Secs
4.5005 M
4.5010 M
Vin
lind
I
Q
V
Q
LS_DRV
40.0
20.0
0
20.0
40.0
l
0
4.00
8.00
12.0
16.0
i
1.50
500 M
2.50
4.50
6.50
i
320
240
160
80.0
0
v
0
20.0
40.0
60.0
80.0
v
Figure 29. LowSide MOSFET Turn Off
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