參數(shù)資料
型號: NAND128W3A2BV6E
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
封裝: 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
文件頁數(shù): 28/56頁
文件大?。?/td> 951K
代理商: NAND128W3A2BV6E
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
34/56
Table 18. DC Characteristics, 1.8V Devices
Note: Leakage currents double on stacked devices.
Figure 21. Equivalent Testing Circuit For AC Characteristics Measurement
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
8
15
mA
IDD2
Program
-
8
15
mA
IDD3
Erase
-
8
15
mA
IDD5
Stand-By Current (CMOS)
128Mb, 256Mb, 512Mb devices
E=VDD-0.2,
WP=0/VDD
-
10
50
A
Stand-By Current (CMOS)
512Mb and 1Gb Dual Die devices
-
20
100
A
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
±10
A
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
±10
A
VIH
Input High Voltage
-
VDD-0.4
-
VDD+0.3
V
VIL
Input Low Voltage
-
-0.3
-
0.4
V
VOH
Output High Voltage Level
IOH = -100A
VDD-0.1
-
V
VOL
Output Low Voltage Level
IOL = 100A
-
0.1
V
IOL (RB)
Output Low Current (RB)
VOL = 0.1V
3
4
mA
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
1.1
V
Ai11085
NAND Flash
CL
2Rref
VDD
2Rref
GND
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