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參數(shù)資料
| 型號(hào)： | MT16LSDT464A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 4 Meg x 64 SDRAM DIMMs(4M x 64同步動(dòng)態(tài)RAM,雙列直插存儲(chǔ)器模塊) |
| 中文描述： | 4梅格× 64 SDRAM的內(nèi)存插槽（4米× 64同步動(dòng)態(tài)內(nèi)存，雙列直插存儲(chǔ)器模塊） |
| 文件頁(yè)數(shù)： | 15/19頁(yè) |
| 文件大?。?/td> | 257K |
| 代理商： | MT16LSDT464A |
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2, 4 Meg x 64 SDRAM DIMMs
ZM02.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
15
2, 4 MEG x 64
SDRAM DIMMs
OBSOLETE
SERIAL PRESENCE-DETECT EEPROM DC OPERATING CONDITIONS
(Notes: 1) (V
DD
= +3.3V
±
0.3V)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
OUT
= 3mA
INPUT LEAKAGE CURRENT: V
IN
= GND to V
DD
OUTPUT LEAKAGE CURRENT: V
OUT
= GND to V
DD
STANDBY CURRENT:
SCL = SDA = V
DD
- 0.3V; All other inputs = GND or 3.3V +10%
POWER SUPPLY CURRENT:
SCL clock frequency = 100 KHz
SYMBOL
V
DD
V
IH
V
IL
V
OL
I
LI
I
LO
I
SB
MIN
3
MAX
3.6
UNITS
V
V
V
V
μ
A
μ
A
μ
A
NOTES
V
DD
×
0.7 V
DD
+
0.5
-1
–
–
–
–
V
DD
×
0.3
0.4
10
10
30
I
CC
–
2
mA
SERIAL PRESENCE-DETECT EEPROM AC OPERATING CONDITIONS
(Notes: 1) (V
DD
= +3.3V
±
0.3V)
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
SYMBOL
t
AA
t
BUF
t
DH
t
F
t
HD:DAT
t
HD:STA
t
HIGH
t
I
t
LOW
t
R
t
SCL
t
SU:DAT
t
SU:STA
t
SU:STO
t
WRC
MIN
0.3
4.7
300
MAX
3.5
UNITS
μ
s
μ
s
ns
ns
μ
s
μ
s
μ
s
ns
μ
s
μ
s
KHz
ns
μ
s
μ
s
ms
NOTES
300
0
4
4
100
4.7
1
100
250
4.7
4.7
10
23
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| MT16LSDT6464A | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM MODULE |
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| MT16LSDT6464AG-133 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM MODULE |
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