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參數(shù)資料
| 型號： | MT16LSDT464A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 4 Meg x 64 SDRAM DIMMs(4M x 64同步動態(tài)RAM,雙列直插存儲器模塊) |
| 中文描述： | 4梅格× 64 SDRAM的內(nèi)存插槽（4米× 64同步動態(tài)內(nèi)存，雙列直插存儲器模塊） |
| 文件頁數(shù)： | 13/19頁 |
| 文件大?。?/td> | 257K |
| 代理商： | MT16LSDT464A |
2, 4 Meg x 64 SDRAM DIMMs
ZM02.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
13
2, 4 MEG x 64
SDRAM DIMMs
OBSOLETE
SDRAM COMPONENT* AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11)
AC CHARACTERISTICS
PARAMETER
-10B
-662
SYMBOL
t
AC
t
AC
t
AC
t
AH
t
AS
t
CH
t
CL
t
CK
t
CK
t
CK
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ
t
HZ
t
HZ
t
LZ
t
OH
t
RAS
t
RC
t
RCD
t
REF
t
RP
t
RRD
t
T
t
WR
MIN
MAX
6
9
27
MIN
MAX
7.5
9
27
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
t
CK
ns
ns
CL = 3
CL = 2
CL = 1
Access time from CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
1
2
3
3
8
1
3
3.5
3.5
10
15
30
1
3
1
3
1
3
CL = 3
CL = 2
CL = 1
26
26
26
Clock cycle time
12
30
1
2
1
2
1
2
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
CL = 3
CL = 2
CL = 1
6
7
8
10
10
10
Data-out high-impedance time
10
15
15
Data-out low-impedance time
Data-out hold time
ACTIVE to PRECHARGE command period
AUTO REFRESH, ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 cycles)
PRECHARGE command period
ACTIVE bank A to ACTIVE bank B command period
Transition time
WRITE recovery time
1
3
2
3
50
80
20
120,000
60
90
30
120,000
64
64
24
20
0.3
1
10
80
30
20
1
1
10
90
21
1.2
1.2
7
27
28
20
Exit SELF REFRESH to ACTIVE command
t
XSR
CAPACITANCE
16MB
32MB
PARAMETER
Input Capacitance: A0-A10, BA0, RAS#, CAS#, WE#
Input Capacitance: S0#-S3#, CK0-CK3
Input Capacitance: CKE0, CKE1
Input Capacitance: DQMB0#-DQMB7#
Input Capacitance: SCL, SA0-SA2
Input/Output Capacitance: DQ0-DQ63, SDA
SYMBOL
C
I
1
C
I
2
C
I
3
C
I
4
C
I
5
C
IO
MIN
25
15
25
4
–
6
MAX
45
25
45
8
6
10
MIN
45
15
25
7
–
12
MAX
88
25
45
14
6
15
UNITS
pF
pF
pF
pF
pF
pF
NOTES
2
2
2
2
2
2
*Specifications for the SDRAM components used on the module.
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