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參數(shù)資料
| 型號(hào)： | MT16LSDT464A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 4 Meg x 64 SDRAM DIMMs(4M x 64同步動(dòng)態(tài)RAM,雙列直插存儲(chǔ)器模塊) |
| 中文描述： | 4梅格× 64 SDRAM的內(nèi)存插槽（4米× 64同步動(dòng)態(tài)內(nèi)存，雙列直插存儲(chǔ)器模塊） |
| 文件頁數(shù)： | 12/19頁 |
| 文件大小： | 257K |
| 代理商： | MT16LSDT464A |
2, 4 Meg x 64 SDRAM DIMMs
ZM02.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
12
2, 4 MEG x 64
SDRAM DIMMs
OBSOLETE
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply Relative to V
SS
.......... -1V to +4.6V
Voltage on Inputs, NC or I/ O Pins
Relative to V
SS
................................................ -1V to +4.6V
Operating Temperature, T
A
(ambient) .......... 0
°
C to +70
°
C
Storage Temperature (plastic)....................-55
°
C to +125
°
C
Power Dissipation ............................................................. 8W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6) (V
DD
= +3.3V
±
0.3V)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
SYMBOL
V
DD
V
IH
V
IL
I
I
1
I
I
2
I
I
3
I
I
4
I
OZ
MIN
3
2
-0.5
-10
-20
-40
-80
-10
MAX
3.6
UNITS NOTES
V
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
V
DD
+ 0.3
0.8
10
20
40
80
10
25
25
22
DQMB0-DQMB7
CK0-CK3, S0#-S3#
CKE0-CKE1
RAS#, CAS#, A0-A10, BA0, WE#
DQ0-DQ63
22
22
OUTPUT LEAKAGE CURRENT:
DQs are disabled; 0V
≤
V
OUT
≤
V
DD
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -2mA)
Output Low Voltage (I
OUT
= 2mA)
V
OH
2.4
–
V
V
OL
–
0.4
V
Icc SPECIFICATIONS AND CONDITIONS
(Notes: 1, 6, 11, 13) (V
DD
= +3.3V
±
0.3V)
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
t
RC
=
t
RC (MIN)
;
CAS latency = 3;
t
CK = 15ns
STANDBY CURRENT: Power-Down Mode;
t
CK = 15ns (10ns for -10B); CKE
≤
V
IL
(MAX); All banks idle
STANDBY CURRENT: Active Mode; S0#-S3# = HIGH;
t
CK = 15ns (10ns for -10B); CKE
=
HIGH; All banks
active after
t
RCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE;
t
CK = 15ns (10ns for -10B); All banks active;
CAS latency = 3
AUTO REFRESH CURRENT:
t
RC =
t
RC (MIN); CAS latency = 3;
CKE
=
HIGH; S0#-S3# = HIGH;
t
CK = 15ns (10ns for -10B)
SELF REFRESH CURRENT:
CKE
≤
0.2V
SYMBOL
SIZE
16MB
-10B
840
-662
720
UNITS NOTES
I
CC
1
mA
3, 18,
19
32MB 1,200
16MB
32MB
16MB
1,040
16
32
320
I
CC
2
24
48
360
mA
I
CC
3
mA
3, 12,
19
32MB
16MB 1,000
720
640
680
I
CC
4
mA
3, 18,
19
3, 12,
18, 19
4
32MB 1,360
16MB
32MB 1,120
16MB
32MB
1,000
680
1,000
16
32
I
CC
5
760
mA
I
CC
6
8
16
mA
MAX
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