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參數(shù)資料
| 型號： | MT16LSDT464A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 4 Meg x 64 SDRAM DIMMs(4M x 64同步動態(tài)RAM,雙列直插存儲器模塊) |
| 中文描述： | 4梅格× 64 SDRAM的內(nèi)存插槽（4米× 64同步動態(tài)內(nèi)存，雙列直插存儲器模塊） |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 257K |
| 代理商： | MT16LSDT464A |
2, 4 Meg x 64 SDRAM DIMMs
ZM02.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
14
2, 4 MEG x 64
SDRAM DIMMs
OBSOLETE
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11)
PARAMETER
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE command
SYMBOL
t
CCD
t
CKED
t
PED
t
DQD
t
DQM
t
DQZ
t
DWD
t
DAL
t
DPL
t
RDL
t
BDL
t
CDL
t
MRD
t
ROH
t
ROH
t
ROH
-10B
1
1
1
0
0
2
0
4
1
1
1
1
2
3
2
1
-662
1
1
1
0
0
2
0
3
1
1
1
1
2
3
2
1
UNITS NOTES
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
17
14
14
17
17
17
17
15, 21
16, 24
16
17, 24
17
29
17
17
17
CL = 3
CL = 2
CL = 1
SDRAM COMPONENT* ELECTRICAL TIMING CHARACTERISTICS BETWEEN -8 SPEED
OPTIONS
(Notes: 5, 6, 8, 9, 11)
AC CHARACTERISTICS
PARAMETER
Access time from CLK (pos. edge)
-8E
-8D
-8C
-8B
-8A
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
t
AC
6
6
6
t
AC
6
7
9
t
AC
27
27
27
t
CK
8
8
8
t
CK
10
10
12
t
CK
30
30
30
t
RCD
20
20
20
t
RP
20
20
20
t
RC
70
70
70
t
WR
2
2
2
2-2-2
2-2-2
3-2-2
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
6
9
6
9
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
CK
CLKs
30
30
30
30
30
30
30
30
30
21
27
27
Clock cycle time
8
8
12
30
20
24
80
2
12
30
24
24
80
2
ACTIVE to READ or WRITE delay
PRECHARGE command period
AUTO REFRESH, ACTIVE command period
WRITE recovery time
100 MHz Speed Reference (CL-
t
RCD-
t
RP)
3-2-3
3-3-3
*Specifications for the SDRAM components used on the module.
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