參數(shù)資料
型號： MSC8144EC
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
元件分類： 數(shù)字信號處理
英文描述： Quad Core Digital Signal Processor
中文描述： 四核心數(shù)字信號處理器
文件頁數(shù)： 32/80頁
文件大?。?/td> 1145K
代理商： MSC8144EC
MSC8144EC Quad Core Digital Signal Processor Data Sheet, Rev. 6
Electrical Characteristics
Freescale Semiconductor
32
2.6.3
PCI DC Electrical Characteristics
2.6.4
TDM DC Electrical Characteristics
2.6.5
Ethernet DC Electrical Characteristics
2.6.5.1
MII, SMII and RMII DC Electrical Characteristics
Table 13. PCI DC Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Supply voltage 3.3 V
V
DDPCI
V
IH
V
IL
V
IPU
I
IN
I
OZ
I
L
I
H
V
OH
3.135
3.465
V
Input high voltage
0.5
×
V
DDPCI
–0.5
3.465
V
Input low voltage
Input Pull-up voltage
2
0.3
×
V
DDPCI
V
0.7
×
V
DDPCI
–30
Input leakage current, 0<V
IN
<V
DDPCI
Tri-state (high impedance off state) leakage current, 0<V
IN
<V
DDPCI
Signal low input current, V
IL
= 0.4 V
2
Signal high input current, V
IH
= 2.0 V
2
Output high voltage, I
OH
= –0.5
μ
A,
except open drain pins
30
μ
A
μ
A
μ
A
μ
A
–30
30
–30
30
–30
30
0.9
×
V
DDPCI
—
V
Output low voltage, I
OL
= 1.5
μ
A
Input Pin Capacitance
2
V
OL
C
IN
—
0.1
×
V
DDPCI
10
V
pF
Notes:
1.
2.
See
Figure 6
for undershoot and overshoot voltages.
Not tested. Guaranteed by design.
Table 14. TDM DC Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Supply voltage 3.3 V
V
DDTDM
V
IH
V
IL
I
IN
I
OZ
I
L
V
OH
V
OL
Cp
3.135
3.465
V
Input high voltage
2.0
3.465
V
Input low voltage
–0.3
0.8
V
Input leakage current, 0<V
IN
<V
DDTDM
Tri-state (high impedance off state) leakage current,
Signal input current,
1
–30
30
μ
A
μ
A
μ
A
–30
30
–30
30
Output high voltage, I
OH
= –1.6 mA,
Output low voltage, I
OL
= 0.4mA
Pin Capacitance
1
2.4
—
V
—
0.4
V
8
pF
Note:
1. Not tested. Guaranteed by design.
Table 15. MII, SMII and RMII DC Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Supply voltage 3.3 V
V
DDGE1
V
DDGE2
3.135
3.465
V
Input high voltage
V
IH
2.0
3.465
V
Input low voltage
V
IL
–0.3
0.8
V
Input leakage current, V
IN
= supply voltage
I
IN
–30
30
μ
A
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