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參數資料
| 型號： | MCZ33989EG |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 元件分類： | CAN |
| 英文描述： | System Basis Chip with High-Speed CAN Transceiver |
| 中文描述： | 系統基礎芯片高高速CAN收發(fā)器 |
| 文件頁數： | 8/66頁 |
| 文件大小： | 1181K |
| 代理商： | MCZ33989EG |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
8
33989
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
POWER OUTPUT (VDD1) IN STOP MODE
(16)
VDD1 Output Voltage
I
DD1
< = 2.0 mA
V
DDSTOP
4.75
5.00
5.25
V
VDD1 Output Voltage
I
DD1
< = 10 mA
V
DDSTOP2
4.75
5.00
5.25
V
I
DD1
Stop Output Current to Wake-up SBC
I
DD1
Over Current to Wake-up Deglitcher Time
(17)
I
DD1SWU
I
DD1DGLT
RST
STOP1
RST
STOP2
10
17
25
mA
40
55
75
μs
Reset Threshold
4.5
4.6
4.7
V
Reset Threshold
4.1
4.2
4.3
V
Line Regulation (C at V
DD1
= 47 μF Tantal)
5.5 V < V
SUP
< 27 V, I
DD
= 2.0 mA
LR
S
—
5.0
25
mV
Load Regulation (C at V
DD1
= 47 μF Tantal)
1 mA < I
DD
< 10 mA
LD
S
—
15
75
mV
Max Decoupling Capacitor at VDD1 Pin, in Stop Mode
(18)
V
DDst-cap
—
—
200
μF
TRACKING VOLTAGE REGULATOR (V2)
(19)
V2 Output Voltage (C at V2 = 10 μF Tantal)
I2 from 2.0 to 200 mA, 5.5 V < V
SUP
< 27 V
V2
0.99
1.0
1.01
V
DD1
I2 Output Current (for information only)
Depending Upon External Ballast Transistor
I2
200
—
—
mA
V2 Control Drive Current Capability
Worst Case at T
J
= 125°C
12
CTRL
0.0
—
10
mA
V2LOW Flag Threshold
V2L
TH
3.75
4.0
4.25
V
LOGIC OUTPUT PIN (MISO)
(20)
Low Level Output Voltage
I
OUT
= 1.5 mA
V
OL
0.0
—
1.0
V
High Level Output Voltage
I
OUT
= 250 μA
V
OH
V
DD1-0.9
—
V
DD1
V
Tri-Stated MISO Leakage Current
0 V < V
MISO
< V
DD
I
HZ
-2.0
—
2.0
μA
Notes
16.
If stop mode is used, the capacitor connected at VDD pin should not exceed the maximum specified by the “V
DDst-cap
” parameter.
If capacitor value is exceeded, upon entering stop mode, VDD output current may exceed the I
DDSWU
and prevent the device to stay in
stop mode.
Guaranteed by design; however, it is not production tested.
Guaranteed by design.
V2 specification with external capacitor
- Stability requirement: C > 42 μF and ESR < 1.3
(Tantalum capacitor), external resistor between base and emitter required
- Measurement conditions: Ballast transistor MJD32C, C = 10 μF Tantalum, 2.2 k resistor between base and emitter of ballast transistor
Push/Pull structure with tri-state condition CS high.
17.
18.
19.
20.
Table 3. Static Electrical Characteristics
(continued)
Characteristics noted under conditions 5.5 V
≤
V
SUP
≤
18 V, -
40
°
C
≤
T
A
≤
125
°
C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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相關代理商/技術參數 |
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|---|---|
| MCZ33989EG | 制造商:Freescale Semiconductor 功能描述:IC SYSTEM BASIS W/CAN TRANCEIVER |
| MCZ33989EGR2 | 功能描述:網絡控制器與處理器 IC SBC-HS RoHS:否 制造商:Micrel 產品:Controller Area Network (CAN) 收發(fā)器數量: 數據速率: 電源電流（最大值）:595 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:PBGA-400 封裝:Tray |
| MCZ33990EF | 功能描述:網絡控制器與處理器 IC CLASS B SERIAL TRANS. RoHS:否 制造商:Micrel 產品:Controller Area Network (CAN) 收發(fā)器數量: 數據速率: 電源電流（最大值）:595 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:PBGA-400 封裝:Tray |
| MCZ33990EF | 制造商:Freescale Semiconductor 功能描述:TRANCEIVER J-1850 CLASS B 8SOIC |
| MCZ33990EF/R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Enhanced Class B Serial Transceiver |
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