參數(shù)資料
型號: MCZ33989EG
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
元件分類: CAN
英文描述: System Basis Chip with High-Speed CAN Transceiver
中文描述: 系統(tǒng)基礎(chǔ)芯片高高速CAN收發(fā)器
文件頁數(shù): 7/66頁
文件大小: 1181K
代理商: MCZ33989EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33989
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
BATFAIL Flag Hysteresis
(13)
VBF
(HYS)
BF
EW
1.0
V
Battery Fall Early Warning Threshold
In Normal and Standby Mode
5.3
5.8
6.3
V
Battery Fall Early Warning Hysteresis
In Normal and Standby Mode
(13)
BF
EWH
0.1
0.2
0.3
V
POWER OUTPUT (VDD1)
(14)
VDD1 Output Voltage
I
DD1
from 2.0 to 200 mA T
AMB
-40 to 125°C, 5.5 V < V
SUP
< 27 V
V
DD1OUT
4.9
5.0
5.1
V
VDD1
Output Voltage
I
DD1
from 2.0 to 200 mA, 4.5 V < V
SUP
< 5.5 V
V
DD1OUT2
4.0
V
Dropout Voltage
I
DD1
= 200 mA
V
DD1DRP
0.2
0.5
V
Dropout Voltage, Limited Output Current
I
DD1
= 50 mA, 4.5 V < V
SUP
V
DD1DRP2
0.1
0.25
V
I
DD1
Output Current
Internally Limited
I
DD1
200
285
350
mA
Junction Thermal Shutdown
Normal or Standby Modes
T
SD
160
200
°C
Junction Over Temperature Pre-Warning
V
DDTEMP
Bit Set
T
PW
125
160
°C
Temperature Threshold Difference
T
SD
-
T
PW
RST
TH1
20
40
°C
Reset Threshold 1
Selectable by SPI. Default Value After Reset.
4.5
4.6
4.7
V
Reset Threshold 2
Selectable by SPI
RST
TH2
4.1
4.2
4.3
V
V
DD1
Range for Reset Active
V
DDR
t
D
1.0
V
Reset Delay Time
Measured at 50% of Reset Signal
4.0
30
μs
Line Regulation (C at V
DD1
= 47 μF Tantal)
9.0 V V
SUP
< 18, I
DD
= 10 mA
LR1
5.0
25
mV
Line Regulation (C at V
DD1
= 47 μF Tantal)
5.5 < V
SUP
< 27 V, I
DD
= 10 mA
LR2
10
25
mV
Load Regulation (C at V
DD1
= 47 μF Tantal)
1.0 mA < I
IDD
< 200 mA
LD
25
75
mV
Thermal Stability
V
SUP
= 13.5 V, 1 = -100 mA Not Tested
(15)
THERM
S
30
50
mV
Notes
13.
14.
With CAN cell in Sleep-Disable state. If CAN cell is Sleep-Enabled for wake-up, an additional 60 μA must be added to specified value.
I
DD1
is the total regulator output current. V
DD
specification with external capacitor. Stability requirement: C > 47 μF ESR < 1.3
(tantalum capacitor). In reset, normal request, normal and standby modes. Measure with C = 47 μF Tantalum.
Guaranteed by design; however, it is not production tested.
15.
Table 3. Static Electrical Characteristics
(continued)
Characteristics noted under conditions 5.5 V
V
SUP
18 V, -
40
°
C
T
A
125
°
C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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