參數(shù)資料
型號(hào): MCR705JP7CDWE
廠商: Freescale Semiconductor
文件頁數(shù): 22/164頁
文件大?。?/td> 0K
描述: MCU 8BIT 224B RAM 28-SOIC
標(biāo)準(zhǔn)包裝: 26
系列: HC05
核心處理器: HC05
芯體尺寸: 8-位
速度: 2.1MHz
連通性: SIO
外圍設(shè)備: POR,溫度傳感器,WDT
輸入/輸出數(shù): 22
程序存儲(chǔ)器容量: 6KB(6K x 8)
程序存儲(chǔ)器類型: OTP
RAM 容量: 224 x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 4x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
包裝: 管件
Personality EPROM (PEPROM)
MC68HC705JJ7 MC68HC705JP7 Advance Information Data Sheet, Rev. 4.1
118
Freescale Semiconductor
12.4 PEPROM Reading
This sequence shows how to read the PEPROM:
1.
Select a bit by writing to the PEBSR.
2.
Read the PEDATA bit in the PESCR.
3.
Store the PEDATA bit in RAM or in a register.
4.
Select another bit by changing the PEBSR.
5.
Continue reading and storing the PEDATA bits until the required personality EPROM data is
retrieved and stored.
Reading the PEPROM is easiest when each PEPROM column contains one byte. Selecting a row 0 bit
selects the first bit, and incrementing the PEPROM bit select register (PEBSR) selects the next bit in row
1 from the same column. Incrementing PEBSR seven more times selects the remaining bits of the column
and ends up selecting the bit in row 0 of the next column, thereby setting the row 0 flag, PEPRZF.
NOTE
A PEPROM byte that has been read can be transferred to the personality
EPROM bit select register (PEBSR) as a temporary storage location such
that subsequent reads of the PEBSR quickly yield that PEPROM byte.
12.5 PEPROM Erasing
MCUs with windowed packages permit PEPROM erasing with ultraviolet light. Erase the PEPROM by
exposing it to 15 Ws/cm2 of ultraviolet light with a wavelength of 2537 angstroms. Position the ultraviolet
light source 1 inch from the window. Do not use a shortwave filter. The erased state of a PEPROM bit is
a logic 0.
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