參數(shù)資料
型號(hào): MAX11043ATL+T
廠商: Maxim Integrated Products
文件頁數(shù): 22/33頁
文件大?。?/td> 0K
描述: IC ADC 16BIT W/DAC 40-TQFN-EP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
類型: ADC,DAC
分辨率(位): 16 b
采樣率(每秒): 9.6M
數(shù)據(jù)接口: 串行
電壓電源: 模擬和數(shù)字
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 40-WFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 40-TQFN-EP(6x6)
包裝: 帶卷 (TR)
MAX11043
4-Channel, 16-Bit, Simultaneous-Sampling ADCs
with PGA, Filter, and 8-/12-Bit Dual-Stage DAC
29
Maxim Integrated
Flash Erase and Programming
When erasing or programming the flash, maintain the
system clock between 14MHz and 27MHz to satisfy
flash timing requirements and ensure CONVRUN = 0.
The system clock used for all digital timing is twice the
ADC sample clock (2 x EX clock/divider).
Always erase the flash page before writing new data.
The procedure for flash mass erase is as follows:
1) Read the flash mode register (18h); proceed when
the LSB is zero.
2) Write 0000h to the flash address register (19h).
3) Write 60h to the flash mode register (18h).
4) Wait 200ms for erase to complete.
5) FFFFh = flash erased state.
The procedure for flash single page erase is as follows:
1) Read the flash mode register (18h); proceed when
the LSB is zero.
2) Write page address, set word address to 00h in the
flash address register (19h).
3) Write 40h to the flash mode register (18h).
4) Wait 20ms for page erase to complete.
5) FFFFh = flash erased state.
The procedure for flash single word write is as follows:
1) Read the flash mode register (18h); proceed when
the LSB is zero.
2) Write page and word address to the flash address
register (19h).
3) Write the data to the flash data in register (1Ah).
4) Write 20h to the flash mode register (18h).
5) Read the flash mode register (18h); proceed when
the LSB is zero (approx. 40s).
The procedure for flash single word read is as follows:
1) Read the flash mode register (18h); proceed when
the LSB is zero.
2) Write page and word address to the flash address
register (19h).
3) Write A0h to the flash mode register (18h).
4) Read the flash mode register (18h); proceed when
the LSB is zero (approx. 1s).
5) Read the data from the flash data out register (1Bh).
The procedure for flash to C-RAM transfer is as follows:
1) Read the flash mode register (18h); proceed when
the LSB is zero.
2) Write C0h to the flash mode register (18h).
3) Read the flash mode register (18h); proceed when
the LSB is zero (approx. 1ms).
4) The content of flash is transferred to C-RAM.
C-RAM
ADDRESS
FLASH
ADDRESS
MSB FOR C-RAM
LSB FOR C-RAM
76h
Not used
3Bh
77h*
ADC gain trim for gain = 32
78h
Not used
3Ch
79h*
ADC gain trim for gain = 64
7Ah*
LP filter gain for filter stage 1, gain = 8
3Dh
7Bh*
LP filter coefficient -A2 for filter stage 1,
gain = 8
7Ch
Not used
3Eh
7Dh*
LP filter coefficient -A3 for filter stage 1,
gain = 8
7Eh*
LP filter coefficient B3 and rectify bit for filter stage 1,
gain = 8
3Fh
7Fh*
LP filter coefficient B2 for filter stage 1,
gain = 8
Table 4. C-RAM and Flash Memory Map (continued)
*
Recommended copy to C-RAM or flash for optimum custom-filter performance.
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