- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382266 > M36DR232 (意法半導(dǎo)體) 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號： | M36DR232 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和2兆位128K的x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 4/46頁 |
| 文件大?。?/td> | 329K |
| 代理商： | M36DR232 |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
M36D232A, M36DR232B
4/46
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
4. V
DD
= V
DDS
= V
DDF
.
Figure 4. Functional Block Diagram
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–40 to 125
°C
T
STG
Storage Temperature
–55 to 150
°C
V
IO(2)
Input or Output Voltage
–0.2 to V
DD(4)
+ 0.3
V
V
DDF
Flash Chip Supply Voltage
–0.5 to 2.7
V
V
DDS
SRAM Chip Supply Voltage
–0.2 to 2.6
V
V
PPF
Program Voltage
–0.5 to 13.0
V
AI05441
Flash Memory
32 Mbit (x16)
VSSF
EF
GF
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
DQ0-DQ15
VDDF
VPPF
A17-A20
A0-A16
SRAM
2 Mbit (x16)
VSSS
VDDS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36DR232AZA | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232B | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232BZA | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36L0R8060B0 | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR232A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A120ZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR232AZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。