參數(shù)資料
型號(hào)： M36DR232
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和2兆位128K的x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 2/46頁(yè)
文件大?。?/td> 329K
代理商： M36DR232
M36D232A, M36DR232B
2/46
DESCRIPTION
The M36DR232 is a multichip memory device con-
taining a 32 Mbit boot block Flash memory and a
4 Mbit of SRAM. The device is offered in a Stacked
LFBGA66 (0.8 mm pitch) package.
The two components are distinguished by use with
three chip enable inputs: EF for the Flash memory
and, E1S and E2S for the SRAM. The two compo-
nents are also separately power supplied and
grounded.
Figure 2. Logic Diagram
Table 1. Signal Names
AI05440
21
A0-A20
EF
DQ0-DQ15
M36DR232A
M36DR232B
GF
VSSF
16
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
VSSS
VDDF VPPFVDDS
A0-A16
Address Inputs
A17-A20
Address Inputs for Flash Chip only
DQ0-DQ15
Data Input/Output
V
DDF
Flash Power Supply
V
PPF
Flash Optional Supply Voltage for Fast
Program & Erase
V
SSF
Flash Ground
V
DDS
SRAM Power Supply
V
SSS
SRAM Ground
NC
Not Connected Internally
Flash control functions
EF
Chip Enable input
GF
Output Enable input
WF
Write Enable input
RPF
Reset input
WPF
Write Protect input
SRAM control functions
E1S, E2S
Chip Enable input
GS
Output Enable input
WS
Write Enable input
UBS
Upper Byte Enable input
LBS
Lower Byte Enable input
相關(guān)PDF資料
PDF描述
M36DR232AZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR232A 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A120ZA6T 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR232AZA 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
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