參數(shù)資料
型號(hào)： M36DR232
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和2兆位128K的x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 25/46頁(yè)
文件大小： 329K
代理商： M36DR232
25/46
M36D232A, M36DR232B
Note: 1.
I
DDES
and
I
DDWS
are specified with device deselected. If device is read while in erase suspend, current draw is sum of
I
DDES
and
DDR.
If the device is read while in program suspend, current draw is the sum of
I
DDWS
and
I
DDR
.
Table 25. Flash Read AC Characteristics
(TA = –40 to 85°C; V
DDF
= 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of EF without increasing t
ELQV
V
PPL
Program Voltage
(Program or
Erase operations)
Program Voltage
(Program or
Erase operations)
Program Voltage
(Program and
Erase lock-out)
Flash
1.65
2.2
V
V
PPH
Flash
11.4
12.6
V
V
PPLK
Flash
1
V
Symbol
Alt
Parameter
Test Condition
Flash
Unit
100
120
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address
Valid
EF = V
IL
, GF = V
IL
100
120
ns
t
AVQV
t
ACC
Address Valid to Output Valid
(Random)
EF = V
IL
, GF = V
IL
100
120
ns
t
AVQV1
t
PAGE
Address Valid to Output Valid
(Page)
EF = V
IL
, GF = V
IL
35
45
ns
t
AXQX
t
OH
Address Transition to Output
Transition
EF = V
IL
, GF = V
IL
0
0
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
GF = V
IL
0
0
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
GF = V
IL
25
35
ns
t
ELQV(2)
t
CE
Chip Enable Low to Output Valid
GF = V
IL
100
120
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output
Transition
GF = V
IL
0
0
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
EF = V
IL
0
0
ns
t
GHQZ(1)
t
DF
Output Enable High to Output
Hi-Z
EF = V
IL
25
35
ns
t
GLQV(2)
t
OE
Output Enable Low to Output
Valid
EF = V
IL
25
35
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
EF = V
IL
0
0
ns
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
相關(guān)PDF資料
PDF描述
M36DR232AZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR232A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A120ZA6T 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR232AZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*