參數(shù)資料
型號(hào)： M36DR232
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和2兆位128K的x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁數(shù)： 18/46頁
文件大?。?/td> 329K
代理商： M36DR232
M36D232A, M36DR232B
18/46
POWER CONSUMPTION
Power Down
The memory provides Reset/Power Down control
input RPF. The Power Down function can be acti-
vated only if the relevant Configuration Register bit
is set to '1'. In this case, when the RPF signal is
pulled at V
SS
the supply current drops to typically
I
DDD
(see Table 24), the memory is deselected
and the outputs are in high impedance.If RPF is
pulled to V
SS
during a Program or Erase opera-
tion, this operation is aborted in t
PLQ7V
and the
memory content is no longer valid (see Reset/
Power Down input description).
Power Up
The memory Command Interface is reset on Pow-
er Up to Read Array. Either EF or WF must be tied
to V
IH
during Power Up to allow maximum security
and the possibility to write a command on the first
rising edge of WF.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the V
CCF
rails decoupled with a 0.1μF capac-
itor close to the V
CCF
and V
SS
pins. The PCB trace
widths should be sufficient to carry the required
V
CCF
program and erase currents.
相關(guān)PDF資料
PDF描述
M36DR232AZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR232A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A120ZA6T 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR232AZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
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