參數(shù)資料
型號(hào)： M36DR232
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和2兆位128K的x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁數(shù)： 35/46頁
文件大?。?/td> 329K
代理商： M36DR232
35/46
M36D232A, M36DR232B
Table 31. SRAM Read AC Characteristics
(T
A
= –40 to 85°C; V
DDS
= 1.65V to 2.2V)
Note: 1. Sampled only. Not 100% tested.
Figure 16. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = V
IL
Note: E1S = Low, E2S = High, GS = Low, WS = High.
Symbol
Alt
Parameter
SRAM
Unit
Min
Max
t
AVAV
t
RC
Read Cycle Time
70
ns
t
AVQV
t
AA
Address Valid to Output Valid
70
ns
t
AXQX
t
OH
Address Transition to Output Transition
10
ns
t
BHQZ
t
BHZ
UBS, LBS Disable to Hi-Z Output
25
ns
t
BLQV
t
BA
UBS, LBS Access Time
70
ns
t
BLQX
t
BLZ
UBS, LBS Enable to Low-Z Output
5
ns
t
E1HQZ
t
HZ1
Chip Enable 1 High to Output Hi-Z
25
ns
t
E1LQV
t
CO1
Chip Enable 1 Low to Output Valid
70
ns
t
E1LQX
t
LZ1
Chip Enable 1 Low to Output Transition
10
ns
t
E2HQV
t
CO2
Chip Enable 2 High to Output Valid
70
ns
t
E2HQX
t
LZ2
Chip Enable 2 High to Output Transition
10
ns
t
E2LQZ
t
HZ2
Chip Enable 2 Low to Output Hi-Z
25
ns
t
GHQZ
t
OHZ
Output Enable High to Output Hi-Z
25
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
35
ns
t
GLQX
t
OLZ
Output Enable Low to Output Transition
5
ns
t
PD(1)
Chip Enable 1 High or Chip Enable 2 Low to Power
Down
70
ns
t
PU(1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
AI04115
tAVAV
tAVQV
tAXQX
A0-A16
DQ0-DQ15
VALID
DATA VALID
DATA VALID
PROCED
相關(guān)PDF資料
PDF描述
M36DR232AZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR232A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A120ZA6T 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR232AZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
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