參數(shù)資料
型號： M36DR232BZA
廠商： 意法半導體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和2兆位128K的x16的SRAM，多個存儲產(chǎn)品
文件頁數(shù)： 1/46頁
文件大?。?/td> 329K
代理商： M36DR232BZA
1/46
November 2001
M36DR232A
M36DR232B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory
and 2 Mbit (128K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DDF
= V
DDS
=1.65V to 2.2V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIME: 100,120ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36DR232A: 00A0h
– Bottom Device Code, M36DR232B: 00A1h
FLASH MEMORY
I
32 Mbit (2Mb x16) BOOT BLOCK
– Parameter Blocks (Top or Bottom Location)
I
PROGRAMMING TIME
– 10μs typical
– Double Word Programming Option
I
ASYNCRONOUS PAGE MODE READ
– Page width: 4 Word
– Page Mode Access Time: 35ns
I
DUAL BANK OPERATION
– Read within one Bank while Program or
Erase within the other
– No Delay between Read and Write
Operations
I
BLOCK PROTECTION ON ALL BLOCKS
– WPF for Block Locking
I
COMMON FLASH INTERFACE
– 64 bit Security Code
SRAM
I
2 Mbit (128K x 16 bit)
I
LOW V
DDS
DATA RETENTION: 1V
I
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
8 x 8 ball array
相關PDF資料
PDF描述
M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R8060T0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36W0R6040T0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M3740B 4 SIREN
M3763A HORN/SIREN WITH SOFT CHIRP 6 ALARM SOUNDS
相關代理商/技術參數(shù)
參數(shù)描述
M36DR432A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A100ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A10CZA6 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR432A10CZA6T 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*