參數(shù)資料
型號(hào): LPC2919
廠商: NXP Semiconductors N.V.
元件分類: 32位微控制器
英文描述: ARM9 microcontroller with CAN and LIN
中文描述: 具有CAN和LIN的ARM9微控制器
文件頁(yè)數(shù): 55/68頁(yè)
文件大?。?/td> 384K
代理商: LPC2919
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LPC2917_19_1
NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 1.01 — 15 November 2007
55 of 68
NXP Semiconductors
LPC2917/19
ARM9 microcontroller with CAN and LIN
[1]
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
amb
= 125
°
C on wafer
level. Cased products are tested at T
amb
= 25
°
C (final testing). Both pre-testing and final testing use correlated test conditions to cover
the specified temperature and power-supply voltage range.
[2]
Leakage current is exponential to temperature; worst-case value is at 125 C Tvj. All clocks off. Analog modules and FLASH powered
down.
[3]
For Port 0, pin 0 to pin 15 add maximum 1.5 pF for input capacitance to ADC. For Port 0, pin 16 to pin 31 add maximum 1.0 pF for input
capacitance to ADC.
[4]
This value is the minimum drive capability. Maximum short-circuit output current is 33 mA (drive HIGH-level, shorted to ground) or
38 mA. (drive LOW-level, shorted to V
DD(IO)
). The device will be damaged if multiple outputs are shorted.
C
xtal
is crystal load capacitance and C
ext
are the two external load capacitors.
The power-up reset has a time filter: V
DD(CORE)
must be above V
trip(high)
for 2
μ
s before reset is de-asserted; V
DD(CORE)
must be below
V
trip(low)
for 11
μ
s before internal reset is asserted.
Not 5 V-tolerant when pull-up is on.
[5]
[6]
[7]
[8]
For I/O Port 0, the maximum input voltage is defined by V
I(ADC)
.
This parameter is not part of production testing or final testing, hence only a typical value is stated. Maximum and minimum values are
based on simulation results.
[9]
12. Dynamic characteristics
Oscillator
R
s(xtal)
Crystal series resistance.
f
osc
= 10 MHz to 15 MHz
C
xtal
= 10 pF;
C
ext
= 18 pF
C
xtal
= 20 pF;
C
ext
= 39 pF
f
osc
= 15 MHz to 20 MHz
C
xtal
= 10 pF;
C
ext
= 18 pF
[5]
-
-
160
Ω
-
-
60
Ω
[5]
-
-
80
Ω
C
i
Input capacitance of
XIN_OSC.
[9]
-
2
pF
Power-up reset
V
trip(high)
V
trip(low)
V
trip(dif)
High trip-level voltage.
Low trip-level voltage.
Difference between high
and low trip-level
voltages.
[6]
1.2
1.4
1.3
120
1.6
1.5
180
V
V
mV
[6]
1.1
[6]
50
Table 30.
V
DD(CORE)
= V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
= -40
°
C to +125
°
C; all voltages are
measured with respect to ground; positive currents flow into the IC; unless otherwise specified.
[1]
Symbol
Parameter
Conditions
Static characteristics
…continued
Min
Typ
Max
Unit
Table 31.
V
DD(CORE)
= V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
=
40
°
C; all voltages are measured with
respect to ground; positive currents flow into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
I/O pins
t
THL
HIGH-to-LOW
transition time.
t
TLH
LOW-to-HIGH
transition time.
Dynamic characteristics
Min
Typ
Max
Unit
C
L
= 30 pF
4
-
13.8
ns
C
L
= 30 pF
4
-
13.8
ns
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