參數(shù)資料
型號(hào): KM416S1020C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x 16Bit x 2 Banks Synchronous DRAM(512K x 16位 x 2組同步動(dòng)態(tài)RAM)
中文描述: 為512k × 16 × 2銀行同步DRAM(為512k × 16位× 2組同步動(dòng)態(tài)RAM)的
文件頁數(shù): 31/42頁
文件大?。?/td> 582K
代理商: KM416S1020C
TIMING DIAGRAM - I
CMOS SDRAM
ELECTRONICS
REV. 4 Nov. '97
0
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Page Read Cycle at Different Bank @Burst Length=4
HIGH
Row Active
(A-Bank)
Row Active
(B-Bank)
Read
(A-Bank)
Read
(B-Bank)
: Don't care
*Note :
1. CS can be don't cared when RAS, CAS and WE are high at the clock high going dege.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Read
(A-Bank)
*Note 2
*Note 1
Read
(B-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
RAa
RBb
RAa
RBb
CAa
CBb
CBd
CAc
CAe
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1 QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1 QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
相關(guān)PDF資料
PDF描述
KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interfacer(512K x 16位 x 2組同步動(dòng)態(tài)RAM(帶SSTL接口))
KM416S4020B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動(dòng)態(tài)RAM)
KM416S4021B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動(dòng)態(tài)RAM)
KM416S4030B 1M x 16Bitx 4 Banks Synchronous DRAM(1M x 16位 x4組同步動(dòng)態(tài)RAM)
KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM(帶SSTL接口))
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