參數(shù)資料
型號(hào): KM416S1020C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x 16Bit x 2 Banks Synchronous DRAM(512K x 16位 x 2組同步動(dòng)態(tài)RAM)
中文描述: 為512k × 16 × 2銀行同步DRAM(為512k × 16位× 2組同步動(dòng)態(tài)RAM)的
文件頁數(shù): 18/42頁
文件大?。?/td> 582K
代理商: KM416S1020C
CMOS SDRAM
DEVICE OPERATIONS - I
ELECTRONICS
REV. 4 Feb. '98
(b) CL=3, BL=4
( Continued )
CLK
i) CMD
DQM
DQ
D
1
D
2
RD
D
3
WR
D
0
D
1
D
2
D
3
D
0
D
1
D
2
D
3
D
0
*Note :
1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only the other bank precharge of dual banks operation.
RD
WR
RD
WR
D
1
D
2
D
3
D
0
RD
WR
RD
WR
D
1
D
2
D
3
D
0
Hi-Z
Note 1
ii) CMD
DQM
DQ
iii) CMD
DQM
DQ
iii) CMD
DQM
DQ
iv) CMD
DQM
DQ
Q
0
Hi-Z
5. Write Interrupted by Precharge & DQM
D
0
D
1
D
2
CLK
CMD
DQM
DQ
Masked by DQM
WR
PRE
D
3
Note 3
Note 2
相關(guān)PDF資料
PDF描述
KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interfacer(512K x 16位 x 2組同步動(dòng)態(tài)RAM(帶SSTL接口))
KM416S4020B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動(dòng)態(tài)RAM)
KM416S4021B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動(dòng)態(tài)RAM)
KM416S4030B 1M x 16Bitx 4 Banks Synchronous DRAM(1M x 16位 x4組同步動(dòng)態(tài)RAM)
KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM(帶SSTL接口))
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